OptiMOS®-T Power-Transistor
Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C p...
OptiMOS®-T Power-
Transistor
Features N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green product (RoHS compliant) 100% Avalanche tested
IPD50N10S3L-16
Product Summary V DS R DS(on),max ID
100 V 15 mΩ 50 A
PG-TO252-3-11
Type IPD50N10S3L-16
Package
Marking
PG-TO252-3-11 QN10L16
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
I D T C=25°C, V GS=10V
T C=100°C, V GS=10V1)
Pulsed drain current1)
I D,pulse T C=25°C
Avalanche energy, single pulse1) E AS I D=25A
Avalanche current, single pulse
I AS
Gate source voltage2)
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Value 50
38
200 330 50 ±20 100 -55 ... +175 55/175/56
Unit A
mJ A V W °C
Rev. 1.1
page 1
2008-04-09
IPD50N10S3L-16
Parameter
Symbol
Conditions
Thermal characteristics1)
Thermal resistance, junction - case SMD version, device on PCB
R thJC R thJA
minimal footprint 6 cm2 cooling area3)
min.
Values typ.
Unit max.
- - 1.5 K/W - - 62 - - 40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current
Gate-source leakage current Drain-source on-state resistance
V (BR)DSS V GS=0V, I D= 1mA V GS(th) V DS=V GS, I D=60µA
I DSS
V DS=80V, V GS=0V, T j=25°C
V...