OptiMOS®-T2 Power-Transistor
Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 17...
OptiMOS®-T2 Power-
Transistor
Features N-channel - Enhancement mode AEC qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green Product (RoHS compliant) 100% Avalanche tested
IPD50N04S4-10
Product Summary V DS R DS(on),max ID
40 V 9.3 mΩ 50 A
PG-TO252-3-313
Type IPD50N04S4-10
Package
Marking
PG-TO252-3-313 4N0410
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
I D T C=25°C, V GS=10V
T C=100°C, V GS=10V1)
Pulsed drain current1)
I D,pulse T C=25°C
Avalanche energy, single pulse1) E AS I D=25A
Avalanche current, single pulse I AS -
Gate source voltage
V GS
-
Power dissipation
P tot T C=25°C
Operating and storage temperature T j, T stg -
IEC climatic category; DIN IEC 68-1 -
-
Value 50
36
200 42 50 ±20 41 -55 ... +175 55/175/56
Unit A
mJ A V W °C
Rev. 1.0
page 1
2010-04-13
IPD50N04S4-10
Parameter
Symbol
Conditions
Thermal characteristics1)
Thermal resistance, junction - case R thJC
Thermal resistance, junction ambient, leaded
R thJA
SMD version, device on PCB
R thJA
-
-
minimal footprint 6 cm2 cooling area2)
min.
Values typ.
Unit max.
- - 3.7 K/W - - 62 - - 62 - - 40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current
Gate-source leakage current Drain-source on-state resistance
V (BR)DSS V GS=0V, I D= 1mA V GS(th) V D...