SC8205

SHENZHEN SIKEWEI ELECTRONICS CO., LTD. SC8205(:S&CIC0692) 20V N-Channel Enhancement-Mode MOSFET RDS(ON), [email protected], [email protected] = 75mΩ RDS(ON), [email protected], [email protected] = 38mΩ RDS(ON), [email protected], [email protected] = 30mΩ RDS(ON), [email protected], [email protected] = 28mΩ RDS(ON), Vgs@10V, [email protected] = 25mΩ Features ¾ Advanced trench process technology ¾ High Density Cell Design For Ultra Low On-Resistance ¾ High Power and Current handing capability ¾ Ideal for Li ion battery pack applications Internal Schematic Diagram D ra in 1 D ra in 2 G at e1 G at e2 S ou rc e 1 S ou rc e 2 N-Channel MOSFET Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current1 Pulsed Drain Current2 Maximum Power Dissipation TA = 25℃ TA = 75℃ VDS VGS ID IDM PD Operating Junction and Storage Temperature Range Tj1 Tstg Junction-to-Ambient Thermal Resistance (PCB mounted)3 ROUA Note: 1. Fused current that based on wire numbers and diameter 2. Repetitive Rating: Pulse width limited by the maximum junction temperature 3. 1-in2 2oz Cu PCB board 15 Limit 20 ±12 6 20 2 1.28 -55 to 150 62.5 Umit V A W ℃ ℃/W SHENZHEN SIKEWEI ELECTRONICS CO., LTD. SC8205(:S&CIC0692) ELECTRICAL CHARACTERISTICS Parameter Symbol Test Condition Min Typ Max Static Drain-Source Breakdown Voltage Drain-Source On-State Resistance Drain-Source On-State Resistance Drain-Source On-State Resistance Drain-Source On-State Resistance Drain-Sou...