N-Channel Enhancement Mode Field Effect Transistor
Description
Production specification
N-Channel Enhancement Mode Field Effect Transistor BL2302
FEATURES
z 20V/3.6A,RDS(ON)=85m_@VGS=4.5V.
Pb
z 20V/3.1A,RDS(ON)=115m_@VGS=2.5V. Lead-free
z Super high density cell design for extremely low RDS(ON).
z Exceptional on-resistance and maximum DC current
capability.
APPLICATIONS
z Power Management in Notebook.
z Portab...
