STD3PK50Z

STD3PK50Z P-channel 500 V, 3 Ω typ., 2.8 A Zener-protected SuperMESH™ Power MOSFET in a DPAK package Datasheet — production data Features Order code VDSS RDS(on)max ID PTOT STD3PK50Z 500 V < 4Ω 2.8 A 70 W ■ Gate charge minimized ■ Extremely high dv/dt capability ■ 100% avalanche tested ■ Very low intrinsic capacitance ■ Improved ESD capability Applications ■ Switching applications Description This device is a P-channel Zener-protected Power MOSFET developed using STMicroelectronics’ SuperMESH™ technology, achieved through optimization of ST’s well established strip-based PowerMESH™ layout. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications. TAB 3 1 DPAK Figure 1. Internal schematic diagram or TAB Table 1. Device summary Order code STD3PK50Z Marking 3PK50Z Package DPAK AM11279v1 Packaging Tape and reel Note: For the P-channel Power MOSFETs actual polarity of voltages and current has to be reversed. August 2012 This is information on a product in full production. Doc ID 18280 Rev 2 1/15 www.st.com 15 Contents Contents STD3PK50Z 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuits . . . . . . . . . . ....