P-CHANNEL MOSFET
STD3PK50Z
P-channel 500 V, 3 Ω typ., 2.8 A Zener-protected SuperMESH™ Power MOSFET in a DPAK package
Datasheet — produc...
Description
STD3PK50Z
P-channel 500 V, 3 Ω typ., 2.8 A Zener-protected SuperMESH™ Power MOSFET in a DPAK package
Datasheet — production data
Features
Order code VDSS RDS(on)max ID
PTOT
STD3PK50Z 500 V < 4Ω 2.8 A 70 W
■ Gate charge minimized ■ Extremely high dv/dt capability ■ 100% avalanche tested ■ Very low intrinsic capacitance ■ Improved ESD capability
Applications
■ Switching applications
Description
This device is a P-channel Zener-protected Power MOSFET developed using STMicroelectronics’ SuperMESH™ technology, achieved through optimization of ST’s well established strip-based PowerMESH™ layout. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.
TAB 3
1
DPAK
Figure 1. Internal schematic diagram
or TAB
Table 1. Device summary Order code STD3PK50Z
Marking 3PK50Z
Package DPAK
AM11279v1
Packaging Tape and reel
Note:
For the P-channel Power MOSFETs actual polarity of voltages and current has to be reversed.
August 2012
This is information on a product in full production.
Doc ID 18280 Rev 2
1/15
www.st.com
15
Contents
Contents
STD3PK50Z
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves)
............................ 6
3 Test circuits . . . . . . . . . . ....
Similar Datasheet