H1270

Shantou Huashan Electronic Devices Co.,Ltd. PNP SILICON TRANSISTOR H1270 █ CENERAL PURPOSE APPLICATION. SWITCHING APPLICATION █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） Tstg——Storage Temperature………………………… -55~150℃ Tj——Junction Temperature…………………………………150℃ PC——Collector Dissipation…………………………………500mW VCBO——Collector-Base Voltage………………………………-35V VCEO——Collector-Emitter Voltage……………………………-30V VEBO——Emitter-Base Voltage………………………………-5V IC——Collector Current……………………………………-500mA TO-92 1―Emitter，E 2―Collector，C 3―Base，B █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol Characteristics Min Typ Max Unit Test Conditions ICBO Collector Cut-off Current -100 nA VCB=-35V, IE=0 IEBO Emitter Cut-off Current -100 nA VEB=-5V, IC=0 HFE（1） DC Current Gain 70 240 VCE=-1V, IC=-100mA HFE（2） 25 VCE=-6V, IC=-400mA VCE(sat) Collector- Emitter Saturation Voltage -0.1 -0.25 V IC=-100mA, IB=-10mA VBE Base-Emitter Voltage -0.8 -1.0 V IC=-1A, IB=-100mA fT Current Gain-Bandwidth Product 200 MHz VCE=-6V, IC=-20mA Cob Output Capacitance 13 pF VCB=-6V, IE=0，f=1MHz █ hFE Classification O 70—140 Y 120—240 ...