N-channel enhancement mode Field-Effect Transistor
R N
JCS2N60 U/I
◆600V,RDS=5.0 Ω@VGS=10V ◆( 12.5nC) ◆ Crss( 7.6pF) ◆ ◆ ◆ dv/dt
◆ ◆ ◆UPS
JCS2N60U/I N , VDMOS 。,...
Description
R N
JCS2N60 U/I
◆600V,RDS=5.0 Ω@VGS=10V ◆( 12.5nC) ◆ Crss( 7.6pF) ◆ ◆ ◆ dv/dt
◆ ◆ ◆UPS
JCS2N60U/I N , VDMOS 。, , 。
(,Tc=25℃)
-
VDSS
ID T=25℃ T=100℃
( 1)
IDM( 1)
VGSS
( 2)
EAS( 2)
( 1)
IAR( 1)
EAR( 1)
( 3) dv/dt( 3)
PD TC=25℃ - 25℃
TJ,TSTG TL
*
TO-251 TO-252
JCS2N60U JCS2N60I
TO-252 TO-251
JCS2N60U/ JCS2N60I 600 1.8 1.1 6.0 ±30 120 1.8 4.4 5.5 44 0.35
-55~+150
300
V A A A V mJ A mJ
V/ns W
W/℃
℃
℃
:200810A
1/11
JCS2N60U/I
-
BVDSS ΔBVDSS/ΔTJ
IDSS
- -
IGSSF IGSSR
VGS(th) RDS(on)
gfs
Ciss Coss Crss
td(on) tr td(off) tf Qg Qgs Qgd
ID=250μA, VGS=0V
600 -
ID=1mA, 25℃
- 0.65
VDS=600V,VGS=0V, TC=25℃
-
-
VDS=480V, TC=125℃
--
VDS=0V, VGS =30V
--
VDS=0V, VGS =-30V
--
VDS = VGS , ID=250μA VGS =10V , ID=0.9A VDS = 40V , ID=0.9A( 4)
2.0 -
3.8 1.85
VDS=25V, VGS =0V, f=1.0MHZ
- 380 - 35 - 7.6
VDD=300V,ID=2.0A,RG=25Ω ( 4,5)
-
16 50
- 40
- 40
VDS =480V , ID=2.0A, VGS =10V ( 4,5)
- 12.5 - 2.2 - 5.4
-
VSD trr Qrr
IS ISM
VGS=0V, IS=1.8A VGS=0V, IS=2.0A dIF/dt=100A/μs ( 4)
---- 250 - 1.31
10 100 100 -100
4.0 5.0 -
490 46 9.9
40 110 90 90 17 -
1.8 6.0 1.4 -
V V/℃ μA μA nA nA
V Ω S
pF pF pF
ns ns ns ns nC nC nC
A A V ns μC
:200810A
2/11
JCS2N60U/I
Rth(j-c) Rth(j-A)
JCS2N60U/ JCS2N60I 2.87 110
℃/W ℃/W
1: 2:L=68mH, IAS=A, V DD=50V, RG=25 Ω, TJ=25℃ 3:ISD ≤2A,di/dt ≤300A/μs,VDD≤BVDSS, TJ=25℃ 4::≤300μs,≤2% 5:
:200810A
3/11
⡍ᕕ᳆
JCS2N608,
⠜ᴀ:200810A
...
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