C4231

www.datSasaheveat4nu.tcIoCm Semiconductor Silicon NPN Power Transistors Product Specification 2SC4231 DESCRIPTION ·With ITO-220 package ·Switching power transistor ·High voltage ,high speed PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (ITO-220) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER VCBO VCEO Collector-base voltage Collector-emitter voltage VEBO Emitter-base voltage IC Collector current ICM Collector current-Peak IB Base current IBM Base current-Peak PT Total power dissipation Tj Junction temperature Tstg Storage temperature CONDITIONS Open emitter Open base Open collector TC=25 THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-C Thermal resistance junction case VALUE 1200 800 7 2 4 1 2 30 150 -55~150 UNIT V V V A A A A W MAX 4.16 UNIT /W www.datSasaheveat4nu.tcIoCm Semiconductor Silicon NPN Power Transistors Product Specification 2SC4231 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A;IB=0 VCEsat Collector-emitter saturation voltage IC=1A; IB=0.2A VBEsat Base-emitter saturation voltage IC=1A ;IB=0.2A ICBO ICEO IEBO hFE-1 Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain At rated volatge At rated volatge IC=1A ; VCE=5V hFE-2 DC current gain IC=1mA ; VCE=5V fT Transition frequency ton Turn-on time ts Storage time tf Fall time IC=0.2A ; VCE=10V IC=1;IB1=0.2A; IB...