DATA SHEET
SILICON POWER TRANSISTOR
2SB1432
PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY P...
DATA SHEET
SILICON POWER
TRANSISTOR
2SB1432
PNP SILICON EPITAXIAL
TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
The 2SB1432 is a Darlington power
transistor that can be directly driven from the output of an IC. This
transistor is ideal for OA and FA equipment such as motor and solenoid drivers.
In addition, a small resin-molded insulation type package contributes to high-density mounting and reduction of mounting cost.
FEATURES High hFE due to Darlington connection
hFE ≥ 1,000 @VCE = −2.0 V, IC = −10 A) Mold package that does not require an insulation board or insulation
bushing
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (pulse)
Base current (DC) Total power dissipation
Junction temperature Storage temperature
Symbol VCBO VCEO VEBO IC(DC) IC(pulse)
IB(DC) PT
Tj Tstg
Conditions
PW ≤ 300 µs, duty cycle ≤ 10% TC = 25°C TA = 25°C
Ratings
−100 −100 −8.0 +–10 +–20
Unit V V V A A
−1.0 30 2.0 150 −55 to +150
A W W °C °C
ORDERING INFORMATION
Part No. 2SB1432
Package Isolated TO-220
(Isolated TO-220)
INTERNAL EQUIVALENT CIRCUIT
1. Base 2. Collector 3. Emitter
The information in this document is subject to change without notice. Before using this document, please
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