IPI100P03P3L-04

OptiMOS®-P Trench Power-Transistor IPB100P03P3L-04 IPI100P03P3L-04, IPP100P03P3L-04 Product Summary V DS -30 V Features P-channel - Logic Level - Enhancement mode R DS(on),max (SMD version) 4 mΩ Automotive AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature I D -100 A PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Green package (RoHS Compliant) Ultra low Rds(on) 100% Avalanche tested Intended for reverse battery protection Type IPB100P03P3L-04 IPI100P03P3L-04 IPP100P03P3L-04 Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Marking 3P03L04 3P03L04 3P03L04 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current1) Pulsed drain current2) ID T C=25°C, V GS=-10V I D,pulse T C=100°C, V GS=-10V2) T C=25°C Avalanche energy, single pulse E AS I D=-80A Gate source voltage V GS Power dissipation P tot T C=25°C Operating and storage temperature T j, T stg IEC climatic category; DIN IEC 68-1 gate pin 1 drain pin 2 source pin 3 Value -100 -100 -400 450 -16 / +5 200 -55 ... +175 55/175/56 Unit A mJ V W °C Rev. 1.1 page 1 2007-09-25 Parameter Thermal characteristics2) Symbol IPB100P03P3L-04 IPI100P03P3L-04, IPP100P03P3L-04 Conditions min. Values typ. Unit max. Thermal resistance, junction - case R thJC Thermal resistance, junction ambient, leaded R thJA SMD version, device on PCB R thJA minimal footprint 6 cm2 cooling area3) - Electrical characteristics, at...