OptiMOS®-P Trench Power-Transistor
IPB100P03P3L-04 IPI100P03P3L-04, IPP100P03P3L-04
Product Summary
V DS -30 V
Featur...
OptiMOS®-P Trench Power-
Transistor
IPB100P03P3L-04 IPI100P03P3L-04, IPP100P03P3L-04
Product Summary
V DS -30 V
Features P-channel - Logic Level - Enhancement mode
R DS(on),max (SMD version)
4 mΩ
Automotive AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature
I D -100 A PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1
Green package (RoHS Compliant)
Ultra low Rds(on)
100% Avalanche tested
Intended for reverse battery protection
Type IPB100P03P3L-04 IPI100P03P3L-04 IPP100P03P3L-04
Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1
Marking 3P03L04 3P03L04 3P03L04
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1) Pulsed drain current2)
ID
T C=25°C, V GS=-10V
I D,pulse
T C=100°C, V GS=-10V2)
T C=25°C
Avalanche energy, single pulse
E AS I D=-80A
Gate source voltage
V GS
Power dissipation
P tot T C=25°C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
gate pin 1
drain pin 2
source pin 3
Value
-100
-100 -400 450 -16 / +5 200 -55 ... +175 55/175/56
Unit A
mJ V W °C
Rev. 1.1
page 1
2007-09-25
Parameter Thermal characteristics2)
Symbol
IPB100P03P3L-04 IPI100P03P3L-04, IPP100P03P3L-04
Conditions
min.
Values typ.
Unit max.
Thermal resistance, junction - case R thJC
Thermal resistance, junction ambient, leaded
R thJA
SMD version, device on PCB
R thJA
minimal footprint 6 cm2 cooling area3)
-
Electrical characteristics, at...