2N03L05

OptiMOS® Power-Transistor Feature N-Channel Enhancement mode Logic Level Excellent Gate Charge x RDS(on) product (FOM) Superior thermal resistance 175°C operating temperature Avalanche rated dv/dt rated P- TO262 -3-1 SPI80N03S2L-05 SPP80N03S2L-05,SPB80N03S2L-05 Product Summary VDS RDS(on) ID 30 V 5.2 mΩ 80 A P- TO263 -3-2 P- TO220 -3-1 Type SPP80N03S2L-05 SPB80N03S2L-05 SPI80N03S2L-05 Package P- TO220 -3-1 P- TO263 -3-2 P- TO262 -3-1 Ordering Code Q67042-S4033 Q67042-S4032 Q67042-S4093 Marking 2N03L05 2N03L05 2N03L05 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current 1) TC=25°C ID Pulsed drain current TC=25°C Avalanche energy, single pulse ID=80 A , VDD=25V, RGS=25Ω Repetitive avalanche energy, limited by Tjmax2) Reverse diode dv/dt IS=80A, VDS=24V, di/dt=200A/µs, Tjmax=175°C Gate source voltage Power dissipation TC=25°C Operating and storage temperature IEC climatic category; DIN IEC 68-1 ID puls EAS EAR dv/dt VGS Ptot Tj , Tstg Value 80 80 320 325 16 6 ±20 167 -55... +175 55/175/56 Unit A mJ kV/µs V W °C Page 1 2003-04-24 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 3) SPI80N03S2L-05 SPP80N03S2L-05,SPB80N03S2L-05 Symbol Values Unit min. typ. max. RthJC RthJA - 0.6 0.9 K/W - - 62 - - 40 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol ...