D458

INCHANGE Semiconductor isc Silicon NPN Power Transistors isc Product Specification 2SD458 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High Power Dissipation- : PC= 80W(Max)@TC=25℃ APPLICATIONS ·Designed for high power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCER Collector-Emitter Voltage RBE= 50Ω VCEO Collector-Emitter Voltage 600 V 600 www.DataSheet.co.kr V 400 V VEBO Emitter-Base Voltage 5V IC Collector Current-Continuous 5A ICM Collector Current-Peak 10 A IBB Base Current-Continuous 2A IBM Base Current-Peak PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature Tstg Storage Temperature 3A 80 W 150 ℃ -65~150 ℃ isc Website：www.iscsemi.cn Datasheet pdf - http://www.DataSheet4U.net/ INCHANGE Semiconductor isc Silicon NPN Power Transistors isc Product Specification 2SD458 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB=B 1A VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB=B 1A ICER Collector Cutoff Current VCE= 600V; RBE= 50Ω hFE DC Current Gain IC= 5A; VCE= 5V MIN TYP. MAX UNIT 400 V 5V 1.5 V 3.0 V 1.0 mA 6.5 50 ‹ hFE Classifications QR 15-50 6.5-30 www.DataSheet.co.kr isc Website：www....