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MAS6502 Dataheets PDF



Part Number MAS6502
Manufacturers Micro Analog systems
Logo Micro Analog systems
Description Piezoresistive Sensor Signal Interface IC
Datasheet MAS6502 DatasheetMAS6502 Datasheet (PDF)

DA6502.008 29 November 2012 MAS6502 Piezoresistive Sensor Signal Interface IC • Optimized for Piezoresistive Pressure Sensors • Very Low Power Consumption • Ratiometric 16 Bit ∆Σ ADC • Linearity 14 Bits • Internal Clock Oscillator • Serial Data Interface (I2C® Bus) • 256 Bit EEPROM Memory DESCRIPTION MAS6502 is a 16 bit Analog-to-Digital Converter (ADC), which employs a delta-sigma (∆Σ) conversion technique. With the linear input signal range of 260 mVPP the linearity is 14 bits. MAS6502 is d.

  MAS6502   MAS6502


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DA6502.008 29 November 2012 MAS6502 Piezoresistive Sensor Signal Interface IC • Optimized for Piezoresistive Pressure Sensors • Very Low Power Consumption • Ratiometric 16 Bit ∆Σ ADC • Linearity 14 Bits • Internal Clock Oscillator • Serial Data Interface (I2C® Bus) • 256 Bit EEPROM Memory DESCRIPTION MAS6502 is a 16 bit Analog-to-Digital Converter (ADC), which employs a delta-sigma (∆Σ) conversion technique. With the linear input signal range of 260 mVPP the linearity is 14 bits. MAS6502 is designed especially to meet the requirement for low power consumption, thus making it an ideal choice for battery powered systems. The MAS6502 is equipped with a standby function, i.e. the ADC is in power down between each conversion. By utilizing this and overall low power consumption, current consumption values of 2.5 µA (one pressure conversion in a second with full 14-bit accuracy) or less can be achieved. MAS6502 has an on-chip second order decimator filter to process the output of the second order ∆Σ -modulator. The ADC also has four selectable input signal ranges with one optional offset level. An internal trimmed clock oscillator provides a system clock signal (DCLK) eliminating the need for an external clock signal. A bi-directional I2C® bus compatible 2-wire serial bus is used for configuring conversion parameters, starting conversion and reading out the A/D conversion result. MAS6502 has one input channel suitable for a piezoresistive pressure sensor. In addition to pressure measurement the device can be configured also for temperature measurement. The 256-bit EEPROM memory is available for storing trimming and calibration data on chip. FEATURES APPLICATIONS • Low Standby Current Consumption 0.05 µA Typ • Calibrated Piezoresistive Pressure Modules • Very Low Supply Current: 0.4 µA…2.5 µA Typ • Temperature measurement • Supply Voltage: 2.0 V…3.6 V • Battery Powered Systems • Ratiometric ∆Σ Conversion • Low Frequency Measurement Applications • Selectable Input Signal Ranges (VDD=2.35V): • Current/Power Consumption Critical Systems 325 mVPP, 220 mVPP, 150 mVPP, 100 mVPP • Industrial and Process Control Applications in • Selectable Optional Offset (VDD=2.35V): Noisy Environments 33 mV Selectable Sensor Resistance Values 5 kΩ, 4.5 kΩ, 4 kΩ, 3.4 kΩ • Over Sampling Ratio: 512, 256, 128, 64 • Internal System Clock Signal 100 kHz • Conversion Times 0.8 ms…10.6 ms Typ • 2-Wire Serial Data Interface (I2C® Bus) • 256 Bit EEPROM Memory • Good Noise Performance due to ∆Σ Architecture I2C is a registered trademark of NXP. 1 (20) DA6502.008 29 November 2012 BLOCK DIAGRAM VDD PI NI COMMON R3 P T P VDD T R1 VREFP TE3 OSC EEPROM ADC CONTROL I2C SDA SCL VREFN XCLR EOC R4 PT R2 T GND MAS6502 TEST TE1 TE2 Figure 1. MAS6502 block diagram ABSOLUTE MAXIMUM RATINGS Parameter Symbol Conditions All Voltages with Respect to Ground Min Max Unit Supply Voltage VDD -0.3 5.0 V Voltage Range for All Pins -0.3 VIN + 0.3 V Latchup Current Limit ILUT For all pins, test according to -100 JESD78A. +100 mA Junction Temperature TJmax + 150 °C Storage Temperature TS Note 1 - 55 +125 °C Note 1. See EEPROM memory data retention at hot temperature. Storage or bake at hot temperatures will reduce the wafer level trimming and calibration data retention time. Note: The absolute maximum rating values are stress ratings only. Functional operation of the device at conditions between maximum operating conditions and absolute maximum ratings is not implied and EEPROM contents may be corrupted. Exposure to these conditions for extended periods may affect device reliability (e.g. hot carrier degradation, oxide breakdown). Applying conditions above absolute maximum ratings may be destructive to the devices. Note: This is a CMOS device and therefore it should be handled carefully to avoid any damage by static voltages (ESD). RECOMMENDED OPERATION CONDITIONS Parameter Symbol Conditions Min Typ Max Unit Supply Voltage VDD 2.0 2.35 3.6 V Supply Voltage at EEPROM Programming VDD T=+25°C. Note 1. 3.0 3.3 3.6 V Operating Temperature TA -40 +25 +85 °C The device performance may deteriorate in the long run if the Recommended Operation Conditions limits are continuously exceeded. Note 1. It is recommended to program the EEPROM at room temperature. 2 (20) DA6502.008 29 November 2012 ELECTRICAL CHARACTERISTICS TA = -40oC to +85oC, VDD = 2.0V to 3.6V, Typ TA = 27oC, Typ VDD = 2.35 V, Rsensor = 4.5kΩ unless otherwise noted Parameter Symbol Conditions Min Typ Max Unit Average ADC Current during Conversion Time ICONV Pressure mode Temperature mode 80 185 330 100 200 350 Average ADC Current in Pressure Measurement IADC_P 1 conversion/s, Rsensor = 4.5 kΩ, OSR=512 0.4 1.0 1.7 during Conversion Period OSR=256 0.2 0.5 0.9 (no sensor current OSR=128 0.1 0.3 0.5 included) OSR=64 0.06 0.15 0.26 Average ADC Current in IADC_T 1 conversion/s, Rsensor = 4.5 kΩ, Temperatur.


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