P-Channel MOSFET
Elektronische Bauelemente
STT3981
-1.6 A, -20 V, RDS(ON) 180 mΩ P-Channel Enhancement Mode Mos.FET
RoHS Compliant Prod...
Description
Elektronische Bauelemente
STT3981
-1.6 A, -20 V, RDS(ON) 180 mΩ P-Channel Enhancement Mode Mos.FET
RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
The STT3981 utilized advance processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The STT3981 is universally used for all commercial-industrial applications.
FEATURES
z Low On-Resistance z Low Gate Charge
PACKAGE DIMENSIONS
REF.
A A1 A2 c D E E1
Millimeter Min. Max.
1.10 Max
0 0.10
0.70
1.00
0.12 Ref
2.70
3.10
2.60
3.00
1.40
1.80
REF.
L L1
b e e1
Millimeter
Min. Max.
0.45 Ref
0.60 Ref
0° 10°
0.30
0.50
0.95 Ref
1.90 Ref
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current3
Pulsed Drain Current1 Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range
Symbol VDS VGS
ID @TA=25℃ ID @TA=70℃
IDM PD @TA=25℃
TJ, TSTG
THERMAL DATA
Parameter Thermal Resistance Junction-ambient3 (Max)
Symbol RθJA
Ratings -20 ±8 -1.6 -1.3 -8 0.8
0.006 -55 ~ +150
Ratings 150
Unit V V A A W
W/℃ ℃
Unit ℃/W
01-June-2005 Rev. B
Page 1 of 5
Elektronische Bauelemente
STT3981
-1.6 A, -20 V, RDS(ON) 180 mΩ P-Channel Enhancement Mode Mos.FET
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol Min Typ Max Unit
Test Conditions
Drain-Source Breakdown Voltage Gate Threshold Voltage
Static BVDSS -20 - - V VGS = 0, ID=250...
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