C4908

www.datSasaheveat4nu.tcIoCm Semiconductor Silicon NPN Power Transistors Product Specification 2SC4908 DESCRIPTION ·With TO-220F package ·High voltage. ·High speed switching APPLICATIONS ·For switching regulator and general purpose applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VCBO VCEO VEBO IC ICM IB PC Tj Tstg Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature Open emitter Open base Open collector TC=25 VALUE 900 800 7 3 6 1.5 35 150 -55~150 UNIT V V V A A A W www.datSasaheveat4nu.tcIoCm Semiconductor Silicon NPN Power Transistors Product Specification 2SC4908 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage IC=10mA ; IB=0 VCEsat Collector-emitter saturation voltage IC=0.7A ;IB=0.14A VBEsat Base-emitter saturation voltage IC=0.7A ;IB=0.14A ICBO Collector cut-off current VCB=800V; IE=0 IEBO Emitter cut-off current VEB=7V; IC=0 hFE DC current gain IC=0.7A ; VCE=4V COB Output capacitance IE=0; VCB=10V;f=1MHz fT Transition frequency IE=-0.3A ; VCE=12V Switching times ton Turn-on time ts Storage time tf Fall time IC=0.7A; IB1=0.1A IB2=-0.35A VCC=250V ,RL=357B MIN TYP. MAX UNIT 800 V 0.5 V 1.2 V 100 µA 10...