GA100TS60SQ

Bulletin I27119 rev. B 06/02 GA100TS60SQ "HALF-BRIDGE" IGBT INT-A-PAK Features Standard Speed IGBT Generation 4 Standard Speed IGBT Technology QuietIR Antiparallel diodes with Fast Soft recovery Very Low Conduction Losses Industry Standard Package Aluminum Nitride DBC UL approved (file E78996) VCES = 600V IC = 220A DC VCE(on) typ. = 1.39V @ IC = 200A TJ = 25°C Benefits Optimized for high current inverter stages (AC TIG welding machines) Direct mounting to heatsink Hard switching operation frequency up to 1 KHz Very low junction-to-case thermal resistance Low EMI INT-A-PAK Absolute Maximum Ratings Parameters VCES IC ICM ILM VGE VISOL PD Collector-to-Emitter Voltage Continuos Collector Current Pulsed Collector Current Peak Switching Current Gate-to-Emitter Voltage RMS Isolation Voltage, Any Terminal to Case, t = 1 min Maximum Power Dissipation @ TC = 25°C @ TC = 100°C @ TC = 25°C @ TC = 130°C Max 600 220 100 440 440 ± 20 2500 780 312 Units V A V W www.irf.com 1 GA100TS60SQ Bulletin I27119 rev. B 06/02 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameters VBRCES V CE(on) Collector-to-Emitter Breakdown Voltage Collector-to-Emitter Voltage Min Typ Max Units Test Conditions 600 1.11 1.39 1.08 1.21 1.17 6 1 1.21 1.16 10 1.28 1.24 ± 250 nA mA V V V GE = 0V, I C = 1mA V GE = 15V, I C = 100A IC = 200A V GE = 15V, I C = 100A, T J = 125°C I C = 0.25mA V GE = 0V, V CE = 600V V GE = 0V, V CE = 600V, T J = 125°C I C = 100A, V G...