CFF8N80

7.8 Amps，800Volts N-Channel MOSFET ■ Description The HX8N80(C) N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. ■ Features � RDS(ON) = 1.75 Ω@VGS = 10 V � Low gate charge ( typical 27nC) � High ruggedness � Fast switching capability � Avalanche energy specified � Improved dv/dt capability ■ Symbol CFF/P8N80 ■ Ordering Information Order Number Normal Lead Free Plating HX8N80(C)-TA3-T HX8N80(C)L-TA3-T HX8N80(C)-TF3-T HX8N80(C)L-TF3-T Note:Pin Assignment: G:Gate D:Drain S:Source HX8N80(C)L-TA3-T （1）Packing Type （2）Package Type （3）Lead Plating Package TO-220 TO-220F Pin Assignment 123 GD S GD S Packing Tube Tube (1)T:Tube,R:Tape Reel (2)TA3:TO-220,TF3:TO-220F (3)L:Lead Free Plating Blank：Pb/Sn ■ Absolute Maximum Ratings(Tc=25℃,unless otherwise specified) Parameter Symbol Ratings TO-220 TO-220F Drain-Source Voltage VDSS 800 Gate-Source Voltage Drain Currenet Continuous Tc=25℃ Tc=100℃ Drain Current Pulsed (Note 1) VGSS ID IDP 7.8 4.5 26.4 ±30 7.8＊ 4.5＊ 26.4＊ Avalanche Energy Repetitive (Note 1) Single Pulse (Note 2) EAR EAS 6.6 580 Peak Diode Recovery dv/dt (Note 3) dv/dt 4.5 Total Power Dissipation Tc=25℃ Derate above 25℃ PD 167 56 1.33 0.44 Junction Temperature TJ +150 TIANJIN HUANXIN TECHNOLOGY DEVELOPMENT CO., LTD Units V V A A A mJ mJ V/ns W W/℃ ℃ 1 Storage Tempera...