CD965

Continental Device India Limited An ISO/TS 16949 and ISO 9001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR CD965 TO-92 Plastic Package ECB For Low Frequency Power Amplification ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Collector Current Peak Power Dissipation @ Ta=25ºC Junction Temperature Storage Temperature Range SYMBOL VCEO VCBO VEBO IC ICP PC Tj Tstg VALUE 20 40 7 5 8 0.75 150 - 55 to +150 UNITS V V V A A W ºC ºC ABSOLUTE MAXIMUM RATINGS(Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION Collector Emitter Voltage VCEO IC=1mA, IB=0 Collector Base Voltage VCBO IC=100µA, IE=0 Emitter Base Voltage VEBO IE=10µA, IC=0 Collector Cut Off Current ICBO VCB=10V, IE=0 Emitter Cut Off Current IEBO VEB=7V, IC=0 DC Current Gain hFE *IC=500mA, VCE=2V IC=2A, VCE=2V Collector Emitter Saturation Voltage VCE (sat) IC=3A, IB=100mA Base Emitter Saturation Voltage VBE (sat) IC=1A, IB=25mA MIN TYP 20 40 7 180 150 MAX 100 100 600 1.35 1.20 UNITS V V V nA nA V V DYNAMIC CHARACTERISTICS DESCRIPTION Output Capacitance Transition Frequency *hFE Classification SYMBOL TEST CONDITION MIN TYP Cob IE=0, VCB=20V, f=1MHz fT IC=50mA, VCE=6V 150 MAX 50 P : 180 - 270 Q : 230 - 380 R : 340 - 600 UNITS pF MHz CD965Rev_3 080903E Continental Device India Limited Data Sheet Page 1 of 4 L Dimension With 'L' Uncontrolled B 1 2 3 D AA G FF KA E CD965 TO...