Document
ARCHIVE INFORMATION ARCHIVE INFORMATION
Freescale Semiconductor Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for PCN and PCS base station applications with frequencies from
1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.
•
Typical 2 - Carrier N - CDMA Performance IISDQ- 9=58C5D0MmAA,(PPioloutt,=S1y8ncW, PatatsginAgv,gT.,rfa1ff=ic
1fo9r6V0DMDH=z2, 6f2V=ol1ts9,62.5 Codes 8 Through 13)
MHz
1.2288 MHz Channel Bandwidth Carrier. Adjacent Channels Measured
over a 30 kHz Bandwidth at f1 - 885 Khz and f2 +885 kHz. Distortion
Products Measured over 1.2288 MHz Bandwidth at f1 - 2.5 MHz and
f2 +2.5 MHz. Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF.
Output Power — 18 Watts Avg.
Power Gain — 13.0 dB
Efficiency — 23%
ACPR — - 51 dB
IM3 — - 36.5 dBc
• Capable of Handling 5:1 VSWR, @ 26 Vdc, 1960 MHz, 90 Watts CW Output Power
Features
• Internally Matched for Ease of Use • High Gain, High Efficiency and High Linearity • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Excellent Thermal Stability • Characterized with Series Equivalent Large - Signal Impedance Parameters • Available with Low Gold Plating Thickness on Leads. L Suffix Indicates
40μ″ Nominal. • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 Inch Reel.
Document Number: MRF19085 Rev. 8, 5/2006
MRF19085LR3 MRF19085LSR3
1930 - 1990 MHz, 90 W, 26 V LATERAL N - CHANNEL RF POWER MOSFETs
CASE 465 - 06, STYLE 1 NI - 780
MRF19085LR3
CASE 465A - 06, STYLE 1 NI - 780S
MRF19085LSR3
Table 1. Maximum Ratings
Rating
Symbol
Value
Drain - Source Voltage Gate - Source Voltage Total Device Dissipation @ TC = 25°C
Derate above 25°C Storage Temperature Range Case Operating Temperature Operating Junction Temperature Table 2. Thermal Characteristics
VDSS VGS PD
Tstg TC TJ
- 0.5, +65 - 0.5, +15
273 1.56
- 65 to +150
150
200
Characteristic
Symbol
Value (1)
Thermal Resistance, Junction to Case Table 3. ESD Protection Characteristics
RθJC
0.79
Test Conditions
Class
Human Body Model
1 (Minimum)
Machine Model
M3 (Minimum)
1. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955.
Unit Vdc Vdc W W/°C °C °C °C
Unit °C/W
© Freescale Semiconductor, Inc., 2006, 2008. All rights reserved.
RF Device Data Freescale Semiconductor
MRF19085LR3 MRF19085LSR3 1
ARCHIVE INFORMATION ARCHIVE INFORMATION
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Off Characteristics
Drain - Source Breakdown Voltage (VGS = 0 Vdc, ID = 100 μAdc)
V(BR)DSS
65
—
—
Zero Gate Voltage Drain Current (VDS = 26 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
On Characteristics (DC)
Gate Threshold Voltage (VDS = 10 Vdc, ID = 200 μAdc)
Gate Quiescent Voltage (VDS = 26 Vdc, ID = 850 mAdc)
VGS(th)
2
—
4
VGS(Q)
2.5
3.5
4.5
Drain - Source On - Voltage (VGS = 10 Vdc, ID = 2 Adc)
Forward Transconductance (VDS = 10 Vdc, ID = 2 Adc)
VDS(on) gfs
— —
0.18 0.210 6—
Dynamic Characteristics
Reverse Transfer Capacitance (1) (VDS = 26 Vdc, VGS = 0, f = 1.0 MHz)
Crss — 3.6 —
Functional Tests (In Freescale Test Fixture, 50 ohm system) 2 - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carriers. Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF.
Common - Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 18 W Avg., IDQ = 850 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 =1990 MHz)
Gps 12 13 —
Drain Efficiency (VDD = 26 Vdc, Pout = 18 W Avg., IDQ = 850 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 =1990 MHz)
η 21 23 —
3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 18 W Avg., IDQ = 850 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 =1990 MHz); IM3 measured over 1.2288 MHz bandwidth @ f1 - 2.5 MHz and f2 = +2.5 MHz)
IMD
—
- 36.5
- 35
Adjacent Channel Power Ratio (VDD = 26 Vdc, Pout = 18 W Avg., IDQ = 850 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 =1990 MHz); ACPR measured over 30 kHz bandwidth @ f1 - 885 MHz and f2 =+885 MHz)
ACPR
—
- 51 - 48
Input Return Loss (VDD = 26 Vdc, Pout = 18 W Avg., IDQ = 850 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 =1990 MHz)
IRL — - 12 - 9
1. Part is internally matched both on input and output.
Unit Vdc μAdc μAdc Vdc Vdc Vdc
S pF
dB % dBc
dBc
dB
(continued)
MRF19085LR3 MRF19085LSR3 2
RF Device Data Freescale Semiconductor
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max Unit
Functional Tests (In Freescale Test Fixture)
Two - Tone Common - Source Amplifier Power Gain
Gps — 13 — dB
(VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 850 mA, f = 1930 MHz and
1990 MHz, Tone Spacing = 100 kHz)
Two - Tone Drain Efficiency (VDD = 26.