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MRF19085LR3 Dataheets PDF



Part Number MRF19085LR3
Manufacturers Freescale Semiconductor
Logo Freescale Semiconductor
Description RF Power Field Effect Transistors
Datasheet MRF19085LR3 DatasheetMRF19085LR3 Datasheet (PDF)

ARCHIVE INFORMATION ARCHIVE INFORMATION Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. • Typical 2 - Carrier N - CDMA Performance IISDQ- 9=58C5D0MmAA,(PPioloutt,=S1y8ncW, PatatsginAgv,gT.,rfa1ff=ic 1fo9r6V0DMDH=z2, 6f2V=ol1ts9,62.5 Codes 8 Through 13) MHz 1.2288 .

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ARCHIVE INFORMATION ARCHIVE INFORMATION Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. • Typical 2 - Carrier N - CDMA Performance IISDQ- 9=58C5D0MmAA,(PPioloutt,=S1y8ncW, PatatsginAgv,gT.,rfa1ff=ic 1fo9r6V0DMDH=z2, 6f2V=ol1ts9,62.5 Codes 8 Through 13) MHz 1.2288 MHz Channel Bandwidth Carrier. Adjacent Channels Measured over a 30 kHz Bandwidth at f1 - 885 Khz and f2 +885 kHz. Distortion Products Measured over 1.2288 MHz Bandwidth at f1 - 2.5 MHz and f2 +2.5 MHz. Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF. Output Power — 18 Watts Avg. Power Gain — 13.0 dB Efficiency — 23% ACPR — - 51 dB IM3 — - 36.5 dBc • Capable of Handling 5:1 VSWR, @ 26 Vdc, 1960 MHz, 90 Watts CW Output Power Features • Internally Matched for Ease of Use • High Gain, High Efficiency and High Linearity • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Excellent Thermal Stability • Characterized with Series Equivalent Large - Signal Impedance Parameters • Available with Low Gold Plating Thickness on Leads. L Suffix Indicates 40μ″ Nominal. • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 Inch Reel. Document Number: MRF19085 Rev. 8, 5/2006 MRF19085LR3 MRF19085LSR3 1930 - 1990 MHz, 90 W, 26 V LATERAL N - CHANNEL RF POWER MOSFETs CASE 465 - 06, STYLE 1 NI - 780 MRF19085LR3 CASE 465A - 06, STYLE 1 NI - 780S MRF19085LSR3 Table 1. Maximum Ratings Rating Symbol Value Drain - Source Voltage Gate - Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Case Operating Temperature Operating Junction Temperature Table 2. Thermal Characteristics VDSS VGS PD Tstg TC TJ - 0.5, +65 - 0.5, +15 273 1.56 - 65 to +150 150 200 Characteristic Symbol Value (1) Thermal Resistance, Junction to Case Table 3. ESD Protection Characteristics RθJC 0.79 Test Conditions Class Human Body Model 1 (Minimum) Machine Model M3 (Minimum) 1. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. Unit Vdc Vdc W W/°C °C °C °C Unit °C/W © Freescale Semiconductor, Inc., 2006, 2008. All rights reserved. RF Device Data Freescale Semiconductor MRF19085LR3 MRF19085LSR3 1 ARCHIVE INFORMATION ARCHIVE INFORMATION Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Off Characteristics Drain - Source Breakdown Voltage (VGS = 0 Vdc, ID = 100 μAdc) V(BR)DSS 65 — — Zero Gate Voltage Drain Current (VDS = 26 Vdc, VGS = 0 Vdc) IDSS — — 10 Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 On Characteristics (DC) Gate Threshold Voltage (VDS = 10 Vdc, ID = 200 μAdc) Gate Quiescent Voltage (VDS = 26 Vdc, ID = 850 mAdc) VGS(th) 2 — 4 VGS(Q) 2.5 3.5 4.5 Drain - Source On - Voltage (VGS = 10 Vdc, ID = 2 Adc) Forward Transconductance (VDS = 10 Vdc, ID = 2 Adc) VDS(on) gfs — — 0.18 0.210 6— Dynamic Characteristics Reverse Transfer Capacitance (1) (VDS = 26 Vdc, VGS = 0, f = 1.0 MHz) Crss — 3.6 — Functional Tests (In Freescale Test Fixture, 50 ohm system) 2 - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carriers. Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF. Common - Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 18 W Avg., IDQ = 850 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 =1990 MHz) Gps 12 13 — Drain Efficiency (VDD = 26 Vdc, Pout = 18 W Avg., IDQ = 850 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 =1990 MHz) η 21 23 — 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 18 W Avg., IDQ = 850 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 =1990 MHz); IM3 measured over 1.2288 MHz bandwidth @ f1 - 2.5 MHz and f2 = +2.5 MHz) IMD — - 36.5 - 35 Adjacent Channel Power Ratio (VDD = 26 Vdc, Pout = 18 W Avg., IDQ = 850 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 =1990 MHz); ACPR measured over 30 kHz bandwidth @ f1 - 885 MHz and f2 =+885 MHz) ACPR — - 51 - 48 Input Return Loss (VDD = 26 Vdc, Pout = 18 W Avg., IDQ = 850 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 =1990 MHz) IRL — - 12 - 9 1. Part is internally matched both on input and output. Unit Vdc μAdc μAdc Vdc Vdc Vdc S pF dB % dBc dBc dB (continued) MRF19085LR3 MRF19085LSR3 2 RF Device Data Freescale Semiconductor Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Functional Tests (In Freescale Test Fixture) Two - Tone Common - Source Amplifier Power Gain Gps — 13 — dB (VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 850 mA, f = 1930 MHz and 1990 MHz, Tone Spacing = 100 kHz) Two - Tone Drain Efficiency (VDD = 26.


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