HD8205-LOW

HD8205-LOW N-Channel Enhancement Mode Power MOSFET Description The 8205-LOW uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features ● VDS = 20V, ID = 6A RDS(ON) < 28mΩ @ VGS=2.5V RDS(ON) < 20mΩ @ VGS=4.5V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package D1 G1 G2 D2 S1 S2 Schematic diagram Application ●Battery protection ●Load switch ●Power management Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Pulsed (Note 1) IDM Maximum Power Dissipation PD Operating Junction and Storage Temperature Range TJ,TSTG Limit 20 ±10 6 25 1.5 -55 To 150 Unit V V A A W ℃ Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) RθJA 83 ℃/W Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Symbol Condition Off Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA Zero Gate Voltage Drain Current IDSS VDS=19.5V,VGS=0V Min Typ Max Unit 20 21 -- 1 V μA 1 Gate-Body Leakage Current On Characteristics (Note 3) Gate Threshold Voltage Drain-Source On-State Resistance Forward Transconductance Dynamic Characteristics (Note4) Input Capacitance Output Capacitance Reverse Transfer Cap...