Ordering number:EN3553
NPN Epitaxial Planar Silicon Transistor
2SC4433
HF Amplifier Applications
Features
· High power...
Ordering number:EN3553
NPN Epitaxial Planar Silicon
Transistor
2SC4433
HF Amplifier Applications
Features
· High power gain : PG=28dB typ (f=100MHz). · High cutoff frequency : fT=750MHz typ. · Small Cob, Cre.
Package Dimensions
unit:mm 2033A
[2SC4433]
4.0
2.2
0.6 1.8
15.0 3.0
0.4 0.5
0.4 0.4
123 1.3 1.3
0.7 0.7
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC PC Tj
Tstg
3.0 3.8
Conditions
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
Collector Cutoff Current
ICBO VCB=18V, IE=0
Emitter Cutoff Current
IEBO VEB=2V, IC=0
DC Current Gain
hFE VCE=10V, IC=5mA
Gain-Bandwidth Product
fT VCE=10V, IC=5mA
Output Capacitance
Cob VCB=10V, f=1MHz
Reverse transfer Capacitance
Cre VCB=10V, f=1MHz
Collector-to-Emitter Saturation Voltage
VCE(sat) IC=10mA, IB=1mA
Base-to-Collector Time Constant
rbb'Cc VCE=10V, IC=5mA, f=31.9MHz
Power Gain
PG VCE=10V, IC=10mA, f=100MHz
* : The 2SC4433 is classified by 5mA hFE as follows : 60 D 120 100 E 200 160 F 320
1 : Emitter 2 : Collector 3 : Base SANYO : SPA
Ratings 40 18 3 50
300 150 –55 to +150
Unit V V V mA
mW ˚C ˚C
Ratings min typ
60* 750 1.0 0.65
26
max 0.1 0.1
320*
1.5
0.2 25
Unit
µA µA
MHz pF pF V ps dB
Any and all SANYO products described or contained herein do not have specifications that c...
