MRF941

MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon Low Noise, High-Frequency Transistors Designed for use in high gain, low noise small–signal amplifiers. This series features excellent broadband linearity and is offered in a variety of packages. Fully Implanted Base and Emitter Structure 9 Finger, 1.25 Micron Geometry with Gold Top Metal Gold Sintered Back Metal Available in tape and reel packaging options: T1 suffix = 3,000 units per reel T3 suffix = 10,000 units per reel MRF947R, T3 is Emitter–Base Pin out reversed. All electricals same as MRF947 Order this document by MMBR941LT1/D MMBR941 MRF941 MRF947 MRF9411 SERIES IC = 50 mA LOW NOISE HIGH–FREQUENCY TRANSISTORS CASE 318–08, STYLE 6 SOT–23 LOW PROFILE MMBR941LT1, T3, MMBR941BLT1, T3 CASE 317–01, STYLE 2 MACRO–X MRF941 CASE 419–02, STYLE 3 MRF947AT1, MRF947BT1, T3, MRF947T1, T3 CASE 419–02, STYLE 6 MRF947RT3 REV 8 ©MMOotoTrOolaR, OIncL.A19R97F DEVICE DATA CASE 318A–05, STYLE 1 SOT–143 LOW PROFILE MRF9411LT1, MRF9411BLT1, T3 MMBR941 MRF941 MRF947 MRF9411 SERIES 1 MAXIMUM RATINGS Rating Symbol MRF941 MMBR941LT1, T3 MRF9411LT1 MRF947 Series Unit Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Power Dissipation (1) TC = 75°C Derate linearly above Tcase = 75°C @ Collector Current — Continuous (2) Maximum Junction Temperature Storage Temperature Thermal Resistance, Junction to Case VCEO VCBO VEBO PDmax IC TJmax Tstg RθJC 10 20 1.5 0.4 4.0 50 150 – 55 to +150 250 10 20 1.5 0...