BLF1820-40

DISCRETE SEMICONDUCTORS DATA SHEET M3D750 BLF1820-40 UHF power LDMOS transistor Preliminary specification 2001 Aug 10 Philips Semiconductors UHF power LDMOS transistor Preliminary specification BLF1820-40 FEATURES High power gain Easy power control Excellent ruggedness Designed for broadband operation (1.8 to 2 GHz) Internal input and output matching for high gain and efficiency Improved linearity at backoff levels. PINNING PIN 1 2 3 APPLICATIONS Common source class-AB operation for PCN and PCS applications in the 1800 to 2000 MHz frequency range Suitable for GSM, Edge, CDMA and WCDMA applications. DESCRIPTION drain gate source, connected to flange 1 Top view 2 3 MBL290 DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistors encapsulated in a 2-lead SOT608A flange package with a ceramic cap. The common source is connected to the mounting flange. Fig.1 Simplified outline SOT608A. QUICK REFERENCE DATA RF performance at Th = 25 °C in a common source test circuit. MODE OF OPERATION f (MHz) VDS PL Gp ηD dim (V) (W) (dB) (%) (dBc) Two-tone, class-AB f1 = 2000; f2 = 2000.1 26 40 (PEP) >10.5 >30 ≤−25 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER VDS drain-source voltage VGS gate-source voltage ID DC drain current Tstg storage temperature Tj junction temperature MIN. − − − −65 − MAX. 65 ±15 5 +150 200 UNIT V V A °C °C 2001 Aug 10 2 Philips Semiconductors UHF pow...