FDMS7602S

FDMS7602S Dual N-Channel PowerTrench® MOSFET May 2014 FDMS7602S Dual N-Channel PowerTrench® MOSFET Q1: 30 V, 30 A, 7.5 mΩ Q2: 30 V, 30 A, 5.0 mΩ Features General Description Q1: N-Channel „ Max rDS(on) = 7.5 mΩ at VGS = 10 V, ID = 12 A „ Max rDS(on) = 12 mΩ at VGS = 4.5 V, ID = 10 A Q2: N-Channel „ Max rDS(on) = 5.0 mΩ at VGS = 10 V, ID = 17 A „ Max rDS(on) = 6.8 mΩ at VGS = 4.5 V, ID = 14 A „ RoHS Compliant This device includes two specialized N-Channel MOSFETs in a dual MLP package.The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFETTM (Q2) have been designed to provide optimal power efficiency. Applications „ Computing „ Communications „ General Purpose Point of Load „ Notebook VCORE S2 S2 S2 G2 S1/D2 D1 D1 D1 D1 G1 Top Bottom Power 56 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted S2 5 S2 6 S2 7 G2 8 Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Continuous -Pulsed Power Dissipation for Single Operation Power Dissipation for Single Operation Operating and Storage Junction Temperature Range (Note 3) TC = 25 °C TA = 25 °C TA = 25 °C TA = 25 °C Thermal Characteristics Q2 4 D1 3 D1 2 D1 Q1 1 G1 Q1 Q2 30 30 ±20 ±20 30 121a 30 171b 40 2.21a 1.01c 60 2.51b 1.01d -55 to +150 Units V V A W °C RθJA RθJA RθJC Thermal Resistance, Junction to Ambient Thermal Resistance, Junc...