MDD5N50

MDD5N50 N-Channel MOSFET 500V MDD5N50 N-Channel MOSFET 500V, 4.4 A, 1.4Ω General Description The MDD5N50 uses advanced Magnachip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDD5N50 is suitable device for SMPS, Ballast and general purpose applications. Features  VDS = 500V  ID = 4.4A  RDS(ON) ≤ 1.4Ω @VGS = 10V @VGS = 10V Applications  Power Supply  PFC  Ballast Absolute Maximum Ratings (Ta = 25oC) Drain-Source Voltage Gate-Source Voltage Characteristics Continuous Drain Current Pulsed Drain Current(1) Power Dissipation Peak Diode Recovery dv/dt(3) Single Pulse Avalanche Energy(4) Junction and Storage Temperature Range TC=25oC TC=100oC TC=25oC Derate above 25 oC Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient(1) Thermal Resistance, Junction-to-Case(1) Symbol VDSS VGSS ID IDM PD Dv/dt EAS TJ, Tstg Rating 500 ±30 4.4 2.8 17.6 70 0.56 4.5 230 -55~150 Unit V V A A A W W/ oC V/ns mJ oC Symbol RθJA RθJC Rating 62.5 1.8 Unit oC/W Jun. 20011 Version 2.4 1 MagnaChip Semiconductor Ltd. MDD5N50 N-Channel MOSFET 500V Ordering Information Part Number MDD5N50RH Temp. Range -55~150oC Package D – Pak Packing Reel RoHS Status Halogen Free Electrical Characteristics (Ta =25oC) Characteristics Symbol Static Characteristics Drain-Source Breakdown Voltage BVDSS Gate Threshold Voltage VGS(th) Drain Cut-Off Current IDSS Gate Leakage Current IGSS Drain-Source...