C5303

Ordering number:ENN6177 NPN Triple Diffused Planar Silicon Transistor 2SC5303 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features · High speed (tf=100ns typ). · High breakdown voltage (VCBO=1500V). · High reliability (Adoption of HVP process). · Adoption of MBIT process. Package Dimensions unit:mm 2111A [2SC5303] 20.0 5.0 20.7 26.0 2.8 3.0 2.0 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Symbol VCBO VCEO VEBO IC ICP PC Junction Temperature Storage Temperature Tj Tstg Tc=25˚C 1.75 2.9 1.2 12 3 5.45 5.45 0.6 5.45 5.45 1.0 3.1 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3JML Conditions Ratings 1500 800 6 25 50 4.6 140 150 –55 to +150 Unit V V V A A W W ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Collector Cutoff Current Collector-to-Emitter Sustain Voltage Emitter Cutoff Current Collector Cutoff Current DC Current Gain Symbol Conditions ICES VCEO(sus) IEBO ICBO hFE1 hFE2 VCE=1500V, RBE=0 IC=100mA, IB=0 VEB=4V, IC=0 VCB=800V, IE=0 VCE=5V, IC=1.0A VCE=5V, IC=20A Ratings min typ max Unit 1.0 mA 800 V 1.0 mA 10 µA 20 30 47 Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraf...