Document
GF2304
N-Channel Enhancement-Mode MOSFET
VDS 30V RDS(ON) 0.117Ω ID 2.5A
TO-236AB (SOT-23)
.118 (3.0) .110 (2.8) .020 (0.51) .015 (0.37)
3
12
.041 (1.03) .041 (1.03) .035 (0.89) .035 (0.89)
.055 (1.40) .047 (1.20)
Top View
TGREENNCFHET®
0.031 (0.8) 0.035 (0.9)
Pin Configuration 1. Gate 2. Source 3. Drain
Dimensions in inches and (millimeters)
0.079 (2.0) 0.037 (0.95)
0.037 (0.95)
Mounting Pad Layout
max. .004 (0.1) .007 (.180) .003 (.085)
.047 (1.20) .035 (0.90)
.020 (0.51) .020 (0.51) .015 (0.37) .015 (0.37)
.098 (2.5) .091 (2.3)
Mechanical Data
Case: SOT-23 Plastic Package Weight: approx. 0.008g Marking Code: 04
Features
• Advanced trench process technology • High density cell design for ultra-low on-resistance • Popular SOT-23 package with copper lead-frame
for superior thermal and electrical capabilities • Compact and low profile
Maximum Ratings and Thermal Characteristics (TA = 25°C unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source-Voltage
Continuous Drain Current TJ = 150°C Pulsed Drain Current(1) Maximum Power Dissipation(2)
TA = 25°C
TA = 25°C TA = 70°C
Operating Junction and Storage Temperature Range
Maximum Junction-to-Ambient Thermal Resistance(2)
VDS VGS ID IDM
PD
TJ, Tstg RθJA
30 ± 20 2.5 10 1.25 0.80 –55 to +150 100
Notes: (1) Pulse width limited by maximum junction temperature. (2) Surface mounted on FR4 board, (1” x 1”, 2oz. Cu)
Unit V V A A
W
°C °C/W
5/3/01
GF2304
N-Channel Enhancement-Mode MOSFET
VDS 30V RDS(ON) 0.117Ω ID 2.5A
Electrical Characteristics (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Static
Drain-Source Breakdown Voltage
BVDSS
VGS = 0V, ID = 250µA
Gate Threshold Voltage Gate-Body Leakage
VGS(th) IGSS
VDS = VGS, ID = 250µA VDS = 0V, VGS = ±20V
Zero Gate Voltage Drain Current
IDSS
VDS = 30V, VGS = 0V VDS=30V, VGS=0V, TJ=55°C
On-State Drain Current(1)
ID(on)
VDS ≥ 4.5V, VGS = 10V VDS ≥ 4.5V, VGS = 4.5V
Drain-Source On-State Resistance(1) Forward Transconductance(1)
RDS(on) gfs
VGS = 10V, ID = 2.5A VGS = 4.5V, ID = 2.0A VDS = 4.5V, ID = 2.5A
Dynamic
Total Gate Charge Gate-Source Charge Gate-Drain Charge
Qg Qgs VDS = 15V, VGS = 10V Qgd ID = 2.5A
Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time
td(on) tr
td(off) tf
VDD = 15V, RL = 15Ω ID ≈ 1A, VGEN = 10V
RG = 6Ω
Input Capacitance
Ciss VGS = 0V
Output Capacitance
Coss
VDS = 15V
Reverse Transfer Capacitance
Crss f = 1.0MHZ
Source-Drain Diode
Maximum Diode Forward Current
IS
—
Diode Forward Voltage
VSD IS = 1.25A, VGS = 0V
Note: (1) Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%
Switching Test Circuit
VIN
VDD
RD
D
VOUT
Switching Waveforms
td(on)
Min Typ Max Unit
30 – – V
1.0 – — V
–
–
± 100
nA
– – 0.5 µA
– – 10
6–– A
4––
– 0.096 0.117 Ω
– 0.135 0.190
– 4.6 –
S
– 3.7 10 – 0.5 – nC – 0.6 – – 6 20 – 8.8 30
ns – 26 35 – 2.4 20 – 163 – – 27 – pF –9–
— — 2.1 – 0.82 1.2
A V
ton
tr td(off)
90%
toff
tf
90 %
VGEN
RG
G
S
DUT
Output, VOUT Input, VIN 10%
10% 50%
10% INVERTED
90% 50%
PULSE WIDTH
GF2304
N-Channel Enhancement-Mode MOSFET
ID -- Drain Source Current (A)
ID -- Drain-to-Source Current (A)
Ratings and Characteristic Curves (TA = 25°C unless otherwise noted)
10 4.5V
8 VGS = 5V, 6V, 7V, 8V, 10V 4.0V
6 3.5V
4 3.0V
10 VDS = 10V
8
6
4
--55°C 25°C
TJ = 125°C
22 2.5V
C -- Capacitance (pF)
0 01 2 3 4 5 VDS -- Drain-to-Source Voltage (V)
Fig. 3 – Capacitance
220
200 f = 1 MHz VGS = 0V
180
160 Ciss
140
120
100
80
60
40
20 Crss
0 0
Coss 5
10
15 20
25
VDS Drain-to-Source Voltage (V)
30
RDS(ON) -- On-Resistance (Ω)
0 0
0.18 0.12 0.06
12
34
VGS -- Gate-to-Source Voltage (V)
Fig. 4 – On-Resistance vs. Drain Current
VGS = 4.5V
10V
5
0 02 4 6 8
ID -- Drain Current (A)
10
Fig. 5 – Gate Charge
10
VDS = 15V ID = 2.5A
8
VGS -- Gate-to-Source Voltage (V)
6
4
2
0 0 1234
Qg -- Gate Charge (nC)
GF2304
N-Channel Enhancement-Mode MOSFET
Ratings and Characteristic Curves (TA = 25°C unless otherwise noted)
Fig. 6 – On-Resistance vs. Gate-to-Source Voltage
0.4 ID = 2.5A
0.3
Fig. 7 – Source-Drain Diode Forward Voltage
10
VGS = 0V
IS -- Source Current (A)
RDS(ON) -- On-Resistance (Ω)
0.2 TJ = 125°C
0.1 25°C
0 2468 VGS -- Gate-to-Source Voltage (V)
Fig. 8 – Breakdown Voltage vs. Junction Temperature
45
ID = 250µA
43
10
TJ = 125°C
25°C
--55°C
1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7
VSD -- Source-to-Drain Voltage (V)
Fig. 9 – Threshold Voltage
1.6 ID = 250µA
1.4
VGS(th) -- Gate-to-Source Threshold Voltage (V)
BVDSS -- Breakdown Voltage (V)
41 1.2
39 1
37 0.8
35 --50 --25
0
25 50 75 100 125 150
TJ -- Junction Temperature (°C)
0.6 --50 --25 0
25 50 75 100 125 150
TJ -- Junction Temperature (°C)
GF2304
N-Channel Enhancement-Mode MOSFET
Ratings and Characteristic Curves (TA = 25°C unless otherwise noted)
RDS(ON) On-Resistance (Normalized)
Fig. 10 – On-Resistance vs. Junction Temperature
1.8 VGS = 10V
1.6 ID = 2.5A
1.4
1.2
1.0
0.8
0.6 --50 --25 0 25 50 75 1.