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GF2304 Dataheets PDF



Part Number GF2304
Manufacturers General Semiconductor
Logo General Semiconductor
Description N-Channel Enhancement-Mode MOSFET
Datasheet GF2304 DatasheetGF2304 Datasheet (PDF)

GF2304 N-Channel Enhancement-Mode MOSFET VDS 30V RDS(ON) 0.117Ω ID 2.5A TO-236AB (SOT-23) .118 (3.0) .110 (2.8) .020 (0.51) .015 (0.37) 3 12 .041 (1.03) .041 (1.03) .035 (0.89) .035 (0.89) .055 (1.40) .047 (1.20) Top View TGREENNCFHET® 0.031 (0.8) 0.035 (0.9) Pin Configuration 1. Gate 2. Source 3. Drain Dimensions in inches and (millimeters) 0.079 (2.0) 0.037 (0.95) 0.037 (0.95) Mounting Pad Layout max. .004 (0.1) .007 (.180) .003 (.085) .047 (1.20) .035 (0.90) .020 (0.51) .020 (0.51.

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GF2304 N-Channel Enhancement-Mode MOSFET VDS 30V RDS(ON) 0.117Ω ID 2.5A TO-236AB (SOT-23) .118 (3.0) .110 (2.8) .020 (0.51) .015 (0.37) 3 12 .041 (1.03) .041 (1.03) .035 (0.89) .035 (0.89) .055 (1.40) .047 (1.20) Top View TGREENNCFHET® 0.031 (0.8) 0.035 (0.9) Pin Configuration 1. Gate 2. Source 3. Drain Dimensions in inches and (millimeters) 0.079 (2.0) 0.037 (0.95) 0.037 (0.95) Mounting Pad Layout max. .004 (0.1) .007 (.180) .003 (.085) .047 (1.20) .035 (0.90) .020 (0.51) .020 (0.51) .015 (0.37) .015 (0.37) .098 (2.5) .091 (2.3) Mechanical Data Case: SOT-23 Plastic Package Weight: approx. 0.008g Marking Code: 04 Features • Advanced trench process technology • High density cell design for ultra-low on-resistance • Popular SOT-23 package with copper lead-frame for superior thermal and electrical capabilities • Compact and low profile Maximum Ratings and Thermal Characteristics (TA = 25°C unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage Gate-Source-Voltage Continuous Drain Current TJ = 150°C Pulsed Drain Current(1) Maximum Power Dissipation(2) TA = 25°C TA = 25°C TA = 70°C Operating Junction and Storage Temperature Range Maximum Junction-to-Ambient Thermal Resistance(2) VDS VGS ID IDM PD TJ, Tstg RθJA 30 ± 20 2.5 10 1.25 0.80 –55 to +150 100 Notes: (1) Pulse width limited by maximum junction temperature. (2) Surface mounted on FR4 board, (1” x 1”, 2oz. Cu) Unit V V A A W °C °C/W 5/3/01 GF2304 N-Channel Enhancement-Mode MOSFET VDS 30V RDS(ON) 0.117Ω ID 2.5A Electrical Characteristics (TJ = 25°C unless otherwise noted) Parameter Symbol Test Condition Static Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250µA Gate Threshold Voltage Gate-Body Leakage VGS(th) IGSS VDS = VGS, ID = 250µA VDS = 0V, VGS = ±20V Zero Gate Voltage Drain Current IDSS VDS = 30V, VGS = 0V VDS=30V, VGS=0V, TJ=55°C On-State Drain Current(1) ID(on) VDS ≥ 4.5V, VGS = 10V VDS ≥ 4.5V, VGS = 4.5V Drain-Source On-State Resistance(1) Forward Transconductance(1) RDS(on) gfs VGS = 10V, ID = 2.5A VGS = 4.5V, ID = 2.0A VDS = 4.5V, ID = 2.5A Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Qg Qgs VDS = 15V, VGS = 10V Qgd ID = 2.5A Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(on) tr td(off) tf VDD = 15V, RL = 15Ω ID ≈ 1A, VGEN = 10V RG = 6Ω Input Capacitance Ciss VGS = 0V Output Capacitance Coss VDS = 15V Reverse Transfer Capacitance Crss f = 1.0MHZ Source-Drain Diode Maximum Diode Forward Current IS — Diode Forward Voltage VSD IS = 1.25A, VGS = 0V Note: (1) Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2% Switching Test Circuit VIN VDD RD D VOUT Switching Waveforms td(on) Min Typ Max Unit 30 – – V 1.0 – — V – – ± 100 nA – – 0.5 µA – – 10 6–– A 4–– – 0.096 0.117 Ω – 0.135 0.190 – 4.6 – S – 3.7 10 – 0.5 – nC – 0.6 – – 6 20 – 8.8 30 ns – 26 35 – 2.4 20 – 163 – – 27 – pF –9– — — 2.1 – 0.82 1.2 A V ton tr td(off) 90% toff tf 90 % VGEN RG G S DUT Output, VOUT Input, VIN 10% 10% 50% 10% INVERTED 90% 50% PULSE WIDTH GF2304 N-Channel Enhancement-Mode MOSFET ID -- Drain Source Current (A) ID -- Drain-to-Source Current (A) Ratings and Characteristic Curves (TA = 25°C unless otherwise noted) 10 4.5V 8 VGS = 5V, 6V, 7V, 8V, 10V 4.0V 6 3.5V 4 3.0V 10 VDS = 10V 8 6 4 --55°C 25°C TJ = 125°C 22 2.5V C -- Capacitance (pF) 0 01 2 3 4 5 VDS -- Drain-to-Source Voltage (V) Fig. 3 – Capacitance 220 200 f = 1 MHz VGS = 0V 180 160 Ciss 140 120 100 80 60 40 20 Crss 0 0 Coss 5 10 15 20 25 VDS Drain-to-Source Voltage (V) 30 RDS(ON) -- On-Resistance (Ω) 0 0 0.18 0.12 0.06 12 34 VGS -- Gate-to-Source Voltage (V) Fig. 4 – On-Resistance vs. Drain Current VGS = 4.5V 10V 5 0 02 4 6 8 ID -- Drain Current (A) 10 Fig. 5 – Gate Charge 10 VDS = 15V ID = 2.5A 8 VGS -- Gate-to-Source Voltage (V) 6 4 2 0 0 1234 Qg -- Gate Charge (nC) GF2304 N-Channel Enhancement-Mode MOSFET Ratings and Characteristic Curves (TA = 25°C unless otherwise noted) Fig. 6 – On-Resistance vs. Gate-to-Source Voltage 0.4 ID = 2.5A 0.3 Fig. 7 – Source-Drain Diode Forward Voltage 10 VGS = 0V IS -- Source Current (A) RDS(ON) -- On-Resistance (Ω) 0.2 TJ = 125°C 0.1 25°C 0 2468 VGS -- Gate-to-Source Voltage (V) Fig. 8 – Breakdown Voltage vs. Junction Temperature 45 ID = 250µA 43 10 TJ = 125°C 25°C --55°C 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 VSD -- Source-to-Drain Voltage (V) Fig. 9 – Threshold Voltage 1.6 ID = 250µA 1.4 VGS(th) -- Gate-to-Source Threshold Voltage (V) BVDSS -- Breakdown Voltage (V) 41 1.2 39 1 37 0.8 35 --50 --25 0 25 50 75 100 125 150 TJ -- Junction Temperature (°C) 0.6 --50 --25 0 25 50 75 100 125 150 TJ -- Junction Temperature (°C) GF2304 N-Channel Enhancement-Mode MOSFET Ratings and Characteristic Curves (TA = 25°C unless otherwise noted) RDS(ON) On-Resistance (Normalized) Fig. 10 – On-Resistance vs. Junction Temperature 1.8 VGS = 10V 1.6 ID = 2.5A 1.4 1.2 1.0 0.8 0.6 --50 --25 0 25 50 75 1.


A913 GF2304 Si7661


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