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FHF830

Feihonltd

N-channel enhancement mode power MOSFET

* '6 72 *' 6 72) ' * 6 VDSS ID VGSS PD TJ Tstg EAS FHP830 FHF830 Ciss Coss Crss VDS 9,VGS 9I 0+]...


Feihonltd

FHF830

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* '6 72 *' 6 72) ' * 6 VDSS ID VGSS PD TJ Tstg EAS FHP830 FHF830 Ciss Coss Crss VDS 9,VGS 9I 0+] VDS=9,VGS 9I 0+] VDS 9,VGS 9I 0+] ㄀݅ ⡍ᗻখ᭄ؐ 7& &   খ᭄ᯢ ヺো ⓣ⑤ড৥⬉य़ BVDSS ⓣ⑤៾ℶ⬉⌕ IDSS ᷙ⑤៾ℶ⬉⌕ IGSS(F/R) ᗕ⬉ RDS(ON) ᷙ⑤ᵕᓔਃ⬉य़ VGS(th) gFS ⌟ᴵӊ VGS=0V, ID=250μ$ VDS=5009,VGS=0V VGS=f30V,VDS=0V VGS=10V,ID=2.25A VDS 9GS,ID=250μA ID=2.25A,VDS=40V ᳔ᇣؐ 500    2.0 -- ‫݌‬ൟؐ ------ 4.2 ᳔໻ؐ -10 f100 1.5 4.0 -- ऩԡ V μA Q$ ¡ V S ࡼᗕ⡍ᗻ খ᭄ᯢ ᷙᵕ⬉ ᷙ⑤⬉ ᷙⓣ⬉ ヺো Qg Qgs Qgd ⌟ᴵӊ VDS=400V ID=4.5A VGS=10V ᳔ᇣؐ ---- ‫݌‬ൟؐ 27 4.0 12 ᳔໻ؐ 35 --- ऩԡ nC nC nC ᓔ݇⡍ᗻ খ᭄ᯢ ᓊᯊ(ᓔਃ) Ϟछᯊ ᓊᯊ ϟᯊ ヺো Td(on) Tr Td(off) tf ⌟ᴵӊ VDD 9 ID=4.5A RG=25ȍ ᳔ᇣؐ ----- ‫݌‬ൟؐ 15 40 85 45 ᳔໻ؐ 40 90 180 100 ऩԡ ns ns ns ns ㄀݅ Top : 101 VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V Bottom: 5.0 V 100 10-1 10-1 100 1 ජ Notes : 1. 250த s Pulse Test 2. TC = 25ඓ 101 VDS(V) 6 5 4 3 2 1 03 3 V = 10V GS V = 20V GS 69 ID(A) ජ Note : T = 25ඓ J 12 15 101 150oC 100 25oC 10-1 2 4 -55oC ජ Notes : 1. V = 40V DS 2. 250த s Pulse Test 68 VGS(V) 2 10 101 100 10-1 0.2 150ඓ 25ඓ ජ Notes : 1. V = 0V 2. 25G0Sத s Pulse Test 0.4 0.6 0.8 1.0 1.2 1.4 VSD(V) 4 1800 1500 1200 900 600 300 0 10-1 Ciss = Cgs + Cgd (Cds = shorted) C =C +C oss ds gd Crss = Cgd C iss Coss C rss ජ Notes : 1. VGS = 0 V 2. f = 1 MHz 100 101 VSD(V) 5 12 10 VDS = 100V V = 250V DS 8 V = 400V DS 6 4 2 ජ Note : I = 4.5 A D 0 0 4 8 12 16 20 24 28 QG(nc) 6 ㄀݅ 1.2 1.1 1.0 0.9 0.8...




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