MX1011B200Y

DISCRETE SEMICONDUCTORS DATA SHEET MX1011B200Y Microwave power transistor Product specification Supersedes data of January 1995 1997 Feb 18 Philips Semiconductors Microwave power transistor Product specification MX1011B200Y FEATURES Suitable for short and medium pulse applications up to 100 µs pulse width, 10% duty factor Diffused emitter ballasting resistors improve ruggedness Interdigitated emitter-base structure provides high emitter efficiency Gold metallization with barrier realizes very stable characteristics and excellent lifetime Multicell geometry improves power sharing reduces thermal resistance Internal input and output prematching networks allow an easier design of circuits. QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common base class C narrowband amplifier. MODE OF OPERATION CONDITIONS f VCC PL Gp (GHz) (V) (W) (dB) Class C tp = 10 µs; δ = 1% 1.09 50 200 ≥7.5 PINNING - SOT439A PIN DESCRIPTION 1 collector 2 emitter 3 base connected to flange ηC (%) ≥45 APPLICATIONS Intended for use in common base class C broadband pulsed power amplifiers for IFF, TCAS and Mode S applications in the 1030 MHz to 1090 MHz bandwidth. Also suitable for medium pulse, heavy duty operation within the 1030 MHz to 1150 MHz bandwidth. ok, 4 columns 3 Top view 1 2 b 3 MAM045 c e DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT439A metal ceramic flange package, with base connected to flange. Fig.1 Simplified outlin...