BAT54SWT1G/BAT54CWT1G Schottky Diodes
BAT54SWT1G/BAT54CWT1G
Schottky Diodes
April 2005
Connection Diagram
3
BAT54SW...
BAT54SWT1G/BAT54CWT1G
Schottky Diodes
BAT54SWT1G/BAT54CWT1G
Schottky Diodes
April 2005
Connection Diagram
3
BAT54SWT1G
BAT54CWT1G
33
SOT-323
12
MARKING BAT54SWT1G = YB BAT54CWT1G = YC
Absolute Maximum Ratings * Ta = 25°C unless otherwise noted
Symbol
Parameter
VRRM IF(AV) IFSM
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current
Non-repetitive Peak Forward Surge Current Pulse Width = 1.0 second
TSTG TJ
Storage Temperature Range Operating Junction Temperature
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
Symbol
Parameter
PD RθJA
Power Dissipation Thermal Resistance, Junction to Ambient
FR-4 board (3.0 × 4.5 × 0.062” by 1.0 × 0.5” land pads)
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Conditions
VR Breakdown Voltage VF Forward Voltage
IR Reverse Leakage CT Total Capacitance trr Reverse Recovery Time
IR = 10µA IF = 0.1mA IF = 1mA IF = 10mA IF = 30mA IF = 100mA VR = 25V VR = 1V, f = 1.0MHz IF = IR = 10mA, IRR = 1.0mA, RL = 100Ω
12
12
Value
30 200 600
-65 to +125 -65 to +125
Unit
V mA mA
°C °C
Value
232 430
Unit
mW °C/W
Min.
30
Max.
240 320 400 500 0.8
2 10 5.0
Units
V
mV mV mV mV V
µA
pF
ns
©2005 Fairchild Semiconductor Corporation BAT54SWT1G/BAT54CWT1G Rev. A
1
www.fairchildsemi.com
BAT54SWT1G/BAT54CWT1G
Schottky Diodes
Typical Performance Characteristics
Forward Current, IF[A] Reverse Current, IR[A...