SILICON TRANSISTOR
NE85619
/
2SC5006 JEITA Part No.
NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD
D...
SILICON
TRANSISTOR
NE85619
/
2SC5006 JEITA Part No.
NPN SILICON EPITAXIAL
TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD
DESCRIPTION The NE85619 / 2SC5006 is an
NPN epitaxial silicon
transistor designed for use in low noise and small signal amplifiers
fromVHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitride passivated base surface, process (NEST2 process) which is a proprietary fabrication technique.
+0.1 –0
0.3
+0.1 –0.05
FEATURES Low Voltage Use. High fT : 4.5 GHz TYP. (@ VCE = 3 V, IC = 7 mA, f = 1 GHz) Low Cre : 0.7 pF TYP. (@ VCE = 3 V, IE = 0, f = 1 MHz) Low NF : 1.2 dB TYP. (@ VCE = 3 V, IC = 7 mA, f = 1 GHz) High |S21e|2: 9 dB TYP. (@ VCE = 3 V, IC = 7 mA, f = 1 GHz) Ultra Super Mini Mold Package.
ORDERING INFORMATION
PART NUMBER
NE85619-A 2SC5006-A NE85619-T1-A 2SC5006-T1-A
QUANTITY 50 pcs./Unit 3 kpcs./Reel
PACKING STYLE
Embossed tape 8 mm wide. Pin3 (Collector) face to perforation side of the tape. (Pb-Free)
To order evaluation samples, please contact your nearby sales office.
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Collector to Base Voltage
VCBO
20
Collector to Emitter Voltage
VCEO
12
Emitter to Base Voltage
VEBO
3.0
Collector Current
IC 100
Total Power Dissipation
PT 125
Junction Temperature
Tj 150
Storage Temperature
Tstg –60 to +150
V V V mA mW ˚C ˚C
0.75 ± 0.05 0.6
0 to 0.1
1.6 ± 0.1 1.0
0.5 0.5 0.2–+00.1
...