Transistors
2SA2077
Silicon PNP epitaxial planar type
For general amplification Complementary to 2SC5845
■ Features • ...
Transistors
2SA2077
Silicon
PNP epitaxial planar type
For general amplification Complementary to 2SC5845
■ Features High forward current transfer ratio hFE Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine packing.
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature
VCBO VCEO VEBO
IC ICP PC Tj Tstg
−45 −45 −7 −100 −200 200 150 −55 to +150
Unit V V V mA mA mW °C °C
0.40+–00..0150 3
Unit: mm
0.16+–00..0160
0.4±0.2
1.50–+00..0255 2.8–+00..32
5˚
(0.65)
12 (0.95) (0.95)
1.9±0.1 2.90+–00..0250
10˚
1.1–+00..12 1.1–+00..13
Marking Symbol: 7L
0 to 0.1
1: Base 2: Emitter 3: Collector EIAJ: SC-59 Mini3-G1 Package
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Forward current transfer ratio Collector-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited)
VCBO VCEO VEBO ICBO ICEO hFE VCE(sat)
fT Cob
IC = −10 µA, IE = 0 IC = −2 mA, IB = 0 IE = −10 µA, IC = 0 V...
