MT3205A

MT3205A N-Channel Power MOSFET MOS-TECH Semiconductor Co.,LTD MT3205A N-Channel Power MOSFET V, 10A, .mΩ Features RDS(on) = 3.6mΩ ( Typ.)@ VGS = 10V, ID = 100A High performance trench technology for extermly low RDS(on) High power and current handing capability RoHS compliant  Description This N-Channel MOSFET is produced using MOS-TECH Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. D GDS TO-220  G MOSFET Maximum Ratings TC = 25oC unless otherwise noted Symbol VDSS VGSS ID IDM EAS PD Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current -Continuous (TC = 25oC) - Pulsed Single Pulsed Avalanche Energy Power Dissipation (TC = 25oC) - Derate above 25oC TJ, TSTG Operating and Storage Temperature Range Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1) (Note 2) S Ratings 60 ±20 120 470 397 250 1.0 -55 to +175 Ratings 0.65 35 Units V V A A mJ W W/oC oC Units oC/W ©2011 MOS-TECH Semiconductor Corporation MT3205A Rev. B 1 www.mtsemi.com Package Marking and Ordering Information TC = 25oC unless otherwise noted Device Marking MT3205A Device MT3205A Package TO-220 Reel Size - Tape Width - Quantity 50units Electrical Characteristics Symbol Parameter Test Conditions Min. Typ. Off Characteristics BVDSS ...