C2979

2SC2979 Silicon NPN Triple Diffused Application High voltage, high speed and high power switching Outline TO-220AB 1 23 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Base current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VEBO IC I C(peak) IB PC * 1 Tj Tstg 1. Base 2. Collector (Flange) 3. Emitter Ratings 900 800 7 3 6 1.5 40 150 –55 to +150 Unit V V V A A A W °C °C 2SC2979 Electrical Characteristics (Ta = 25°C) Item Collector to emitter sustain voltage Symbol Min VCEO(sus) 800 VCEX(sus) 800 Typ — — Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Turn on time Storage time Fall time Note: 1. Pulse test V(BR)EBO I CBO I CEO hFE1 hFE2 VCE(sat) VBE(sat) t on t stg tf 7 — — 15 7 — — — — — — — — — — — — — — — Max Unit —V —V —V 100 µA 100 µA — — 1.0 V 1.5 V 1.0 µs 3.0 µs 1.0 µs Test conditions IC = 0.2 A, RBE = ∞, L = 100 mH IC = 3 A, IB1 = 0.9 A, IB2 = –0.6 A, VBE = –5.0 V, L = 180 µH, Clamped IE = 10 mA, IC = 0 VCB = 750 V, IE = 0 VCE = 650 V, RBE = ∞ VCE = 5 V, IC = 0.3 A*1 VCE = 5 V, IC = 1.5 A*1 IC = 0.75 A, IB = 0.15 A*1 IC = 1.5 A, IB1 = 0.3 A, IB2 = –0.75 A, VCC ≅ 250 V Collector power dissipation PC (W) Collector current IC (A) Maximum Collector Dissipati...