SLD-650-P5-CS-HR4-04
650nm Laser Diode chip on Submount
UNION OPTRONICS CORP.
650nm Red Laser Diode chip on Submount
...
SLD-650-P5-CS-HR4-04
650nm Laser Diode chip on Submount
UNION OPTRONICS CORP.
650nm Red Laser Diode chip on Submount
SLD-650-P5-CS-HR4-04
Descriptions Features
650nm Laser Diode Chip on Submount Un-cooled Laser chip on submount with MQW structure Gold coated copper submount
External dimensions (Unit : μm)
Maxmum ratings (Tc = 250C) Characteristic Optical Output Power LD Reverse Voltage
Operation Case Temperature
Storage Temperature
Symbol Po
Vr (LD)
Top
Tstg
Rating 7 2
-10 ~ +40
-15 ~ +85
Unit mW V oC oC
UNION OPTRONICS CORP.
3156
No, 156 Kao-Shy Road Yang-Mei, Tao-Yuan, Taiwan, R.O.C.
TEL : 886-3-485-2687
FAX : 886-3-475-4378
E-mail :
[email protected]
Revise by 2006/03/01
650nm Laser Diode chip on Submount
SLD-650-P5-CS-HR4-04 UNION OPTRONICS CORP.
Optical-electrical characteristics (Tc = 250C)
Characteristic
Symbol Test Condition Min. Typ. Max. Unit
Threshold Current
Ith - - 13 22 mA
Operation Current
Iop Po = 5mW - 18 22 mA
Operation Voltage
Vop Po = 5mW 2.0 2.3 2.5 V
Slope Efficiency
SE Po = 1 to 4mW 0.6 0.8 - W/A
Beam Divergence (horizontal)
θ‖ Po = 5mW 5 7 12 deg.
Beam Divergence (vertical)
θ⊥ Po = 5mW 32 38 42 deg.
Lasing Wavelength
λ Po = 5mW 640 652 660 nm
Typical characteristics
Light Power vs.Forward Current
6
10oC 25oC40oC 50oC
60oC 70 oC
4
Light Power (mA)
2
0 0
10 20 30
Forward Current (mA)
40
Ith (mA) vs. Case Temperature
100
Forward Voltage(V)
Forward Voltage vs. Forward Current
3
10 oC 25 oC40 oC 50 oC
60...
