635nm Laser Diode Chips
635nm Red Laser Diode Chips SLD-635-P5-C-N-RG-250-01
Specifications (1) Size : (2) Device: (3) ...
635nm Laser Diode Chips
635nm Red Laser Diode Chips SLD-635-P5-C-N-RG-250-01
Specifications (1) Size : (2) Device: (3) Structure:
250*300*100 m Laser diode bare chip Multi-step growth
External dimensions(Unit : m)
635-P5-C-N-RG-250-01 UNION OPTRONICS CORP.
250
P-electrode and N-electrode are both gold pads.
Absolute Maximum Ratings(Tc=25 )
Parameter
Symbol
Optical Output
Po
Reverse Voltage
Vr
Operation Temperature
Top
Storage Temperature
Tstg
Rating 7 2
-10 +40 -15 +85
Unit mW V
3 156
UNION OPTRONICS CORP.
No, 156 Kao-Shy Road Yang-Mei, Tao-Yuan, Taiwan, R.O.C.
TEL : 886-3-485-2687
FAX : 886-3-475-4378
E-mail :
[email protected]
Revise: 2006/04/12
635nm Laser Diode Chips
635-P5-C-N-RG-250-01 UNION OPTRONICS CORP.
Electrical and Optical Characteristics(Tc=25 )
Parameter
Symbol Condition Min. Typ. Max.
Threshold Current
Ith -
- 28 40
Operating Current
Iop Po=5mW
-
37 50
Operating Voltage
Vop -
- 2.3 2.6
Slope Efficiency
Beam Divergence Parallel
(FWHM)
Perpendicular
3.75mW-1.25mW I3.75mW-I1.25mW
0.3
0.5
// Po=5mW
6
8 10
Po=5mW 30 35 38
Lasing Wavelength
Po=5mW 620 635 640
// and are defined as the angle within which the intensity is 50% of the peak value.
Measuring conditions : Pulse width=5 s , Duty cycle=1%
Unit mA mA Volt
mW/mA
deg. deg. nm
Typical characteristic curves
Optical Output Power v.s. Forward Current
8 10oC 25oC 30oC 40oC 50oC
6
Forward Voltage v.s. Forward Current
3
10oC 25oC 30oC 40oC 50oC 2
Forward Volt...
