S98100MG

S98100MG TECHNICAL DATA Infrared Laser Diode Features Lasing Mode Structure: multi mode Peak Wavelength : typ. 980 nm Optical Ouput Power: 100 mW Package: 5.6 mm Electrical Connection Pin Configuration n-type PIN Function 1 LD Cathode 2 LD Anode, PD Cathode 3 PD Anode Bottom View Absolute Maximum Ratings (TC=20°C) Item CW Output Power LD Reverse Voltage PD Reverse Voltage Operating Case Temperature Storage Temperature Symbol PO Vr VrPD TC Tstg Value 100 2 30 -10 … +40 -15 … +85 Unit mW V V °C °C Specifications (TC=20°C) Item Optical Specifications CW Output Power Center Wavelength FWHM Beam Divergence Electrical Specifications Threshold Current Operating Current Slope Efficiency Operating Voltage Monitor Current Symbol PO λC θ║ θ┴ Ith Iop η Uop Im Min. 970 27 0.5 1 0.4 Typ. 100 980 6 32 40 165 0.8 1.5 0.9 Max. 990 37 50 190 2.1 1.4 Unit mW nm deg deg mA mA mW/mA V mA The above specifications are for reference purpose only and subjected to change without prior notice. 23.09.2010 S98100MG 1 of 6 Package Dimensons 5.6 mm Package (Unit:mm) Typical Performance Curves Optical Ouput Power vs. Forward Current 23.09.2010 S98100MG 2 of 6 Forward Voltage vs. Forward Current Peak Wavelength vs. Case Temperature Far-Field Pattern 23.09.2010 S98100MG 3 of 6 Monitor Current vs. Optical Output Power Slope Efficiency vs. Case Temperature Threshold Current vs. Case Temerature 23.09.2010 S98100MG 4 of 6 MTBF – test report @ 40 °C (TC), 100 mW Using the af...