K2983

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2983 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching application. FEATURES Low on-resistance RDS(on)1 = 20 mΩ (MAX.) (VGS = 10 V, ID = 15 A) RDS(on)2 = 27 mΩ (MAX.) (VGS = 4.5 V, ID = 15 A) Low Ciss Ciss = 1200 pF TYP. Built-in gate protection diode ORDERING INFOMATION PART NUMBER 2SK2983 2SK2983-S 2SK2983-ZJ PACKAGE TO-220AB TO-262 TO-263 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to Source VoltageNote1 Gate to Source VoltageNote2 VDSS VGSS 30 ±20 Drain Current (DC) Drain Current (pulse)Note3 ID(DC) ID(pulse) ±30 ±120 Total Power Dissipation (TA = 25°C) PT 1.5 Total Power Dissipation (TC = 25°C) PT 50 Channel Temperature Tch 150 Storage Temperature Tstg −55 to +150 V V A A W W °C °C Notes1. VGS = 0 V 2. VDS = 0 V 3. PW ≤ 10 µ s, Duty Cycle ≤ 1 % . The information in this document is subject to change without notice. Document No. D12357EJ1V0DS00 (1st edition) Date Published October 1998 NS CP (K) Printed in Japan © 1998 ELECTRICAL CHARACTERISTICS (TA = 25 °C) CHARACTERISTICS SYMBOL TEST CONDITIONS Drain to Source On-state Resistance Gate to Source Cut-off Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source...