High Speed IGBT
SGP30N60HS SGW30N60HS
High Speed IGBT in NPT-technology
• 30% lower Eoff compared to previous generation • Short circu...
Description
SGP30N60HS SGW30N60HS
High Speed IGBT in NPT-technology
30% lower Eoff compared to previous generation Short circuit withstand time – 10 µs
Designed for operation above 30 kHz
NPT-Technology for 600V applications offers: - parallel switching capability - moderate Eoff increase with temperature - very tight parameter distribution
PG-TO-220-3-1
High ruggedness, temperature stable behaviour Pb-free lead plating; RoHS compliant Qualified according to JEDEC1 for target applications Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
C G
E
PG-TO-247-3
Type
VCE IC Eoff) Tj Marking
Package
SGP30N60HS
600V 30 480µJ 150°C G30N60HS PG-TO-220-3-1
SGW30N60HS
600V
30 480µJ 150°C G30N60HS PG-TO-247-3
Maximum Ratings
Parameter
Symbol
Value
Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE ≤ 600V, Tj ≤ 150°C Avalanche energy single pulse IC = 20A, VCC=50V, RGE=25Ω start TJ=25°C Gate-emitter voltage static
transient (tp<1µs, D<0.05)
Short circuit withstand time2) VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C Power dissipation TC = 25°C Operating junction and storage temperature
Time limited operating junction temperature for t < 150h Soldering temperature, 1.6mm (0.063 in.) from case for 10s
VCE IC
ICpuls -
EAS
VGE
tSC
Ptot
Tj , Tstg Tj(tl) -
600
41 30 112 112
165
±20 ±30 10
250
-55...+150
175 260
Unit V A
mJ V µs W °C
1 J-STD-020 and JESD-022 2) ...
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