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LDM-0808-300m-x1 Dataheets PDF



Part Number LDM-0808-300m-x1
Manufacturers Roithner
Logo Roithner
Description High Power Infrared Laser Diode
Datasheet LDM-0808-300m-x1 DatasheetLDM-0808-300m-x1 Datasheet (PDF)

LDM-0808 Series TECHNICAL DATA High Power Infrared Laser Diode C-mount / TO-3 Features • CW Output Power: 0.3 W, 0.5 W, 1.0 W, 2.0 W, 3.0 W, 5.0 W • Variety of Emitting Area • High-efficiency Quantum Well Structure • TO Package or C-Mount Applications • Solid-state Laser Pumping • Medical Usage • Target Designator • Free-space Communication • Infrared Light Sources Specifications (25°C) Type CW Output Power (W) Peak Wavelength Δ (nm) Spectral Width Δλ (nm) Threshold Current (A) Operation Cu.

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LDM-0808 Series TECHNICAL DATA High Power Infrared Laser Diode C-mount / TO-3 Features • CW Output Power: 0.3 W, 0.5 W, 1.0 W, 2.0 W, 3.0 W, 5.0 W • Variety of Emitting Area • High-efficiency Quantum Well Structure • TO Package or C-Mount Applications • Solid-state Laser Pumping • Medical Usage • Target Designator • Free-space Communication • Infrared Light Sources Specifications (25°C) Type CW Output Power (W) Peak Wavelength Δ (nm) Spectral Width Δλ (nm) Threshold Current (A) Operation Current (A) Operation Voltage (V) Slope Efficiency (W/A) Beam Divergence θ┴×θ║ (deg) Wavelength Temperature Coefficient (nm/°C) Emitting Area (µm) Series Resistance (Ω) Polarization Package Style Operating Temperature (°C) Storage Temperature (°C) LDM-0808-300m-x1 0.3 808±10 ≤2.5 ≤0.10 ≤0.40 ≤2.0 ≥1.0 40x10 0.3 30x1 ≤1.0 TE 9mm/TO3/C-Mount 10 … 40 -10 … 60 LDM-0808-500m-x2 0.5 808±10 ≤2.5 ≤0.13 ≤0.60 ≤2.0 ≥1.0 40x10 0.3 50x1 ≤0.60 TE 9mm/TO3/C-Mount 10 … 40 -10 … 60 LDM-0808-001W-x3 1.0 808±10 ≤2.5 ≤0.26 ≤1.24 ≤2.0 ≥1.0 40x10 0.3 100x1 ≤0.30 TE TO3/C-Mount 10 … 40 -10 … 60 Type CW Output Power (W) Peak Wavelength Δ (nm) Spectral Width Δλ (nm) Threshold Current (A) Operation Current (A) Operation Voltage (V) Slope Efficiency (W/A) Beam Divergence θ┴×θ║ (deg) Wavelength Temperature Coefficient (nm/°C) Emitting Area (µm) Series Resistance (Ω) Polarization Package Style Operating Temperature (°C) Storage Temperature (°C) LDM-0808-002W- x5 x3 2.0 2.0 808±10 808±10 ≤2.5 ≤2.5 ≤0.50 ≤0.45 ≤2.55 ≤2.20 ≤2.0 ≤2.1 ≥1.0 ≥1.1 40x10 37x8 0.3 0.3 200x1 ≤0.25 TE TO3/C-Mount 10 … 40 -10 … 60 100x1 ≤0.25 TM TO3/C-Mount 10 … 40 -10 … 60 LDM-0808-003W- x3 3.0 808±10 ≤2.5 ≤0.55 ≤3.00 ≤2.1 ≥1.1 37x8 0.3 100x1 ≤0.15 TM TO3/C-Mount 10 … 40 -10 … 60 LDM-0808-005W- x5 5.0 808±10 ≤2.5 ≤0.75 ≤5.3 ≤2.1 ≥1.1 37x8 0.3 200x1 ≤0.05 TM TO3/C-Mount 10 … 40 -10 … 60 Package Dimensons TO-3 Package (Unit:mm) C-Mount (Unit:mm) Typical Performance Curves Notes 1. High power laser diodes are high energy laser devices. It is harmful to human body and health. Never look directly into the laser output port. 2. High power laser diodes could operate in forward voltage. The reverse current and voltage should not be higher than 25µA and 3V, respectively. 3. Heavy humidity can get dew on the LD then damage the LD. 4. The generated heat must be removed in time when the LD working. 5. The high temperature will effect the performance of the products. The lifetime can also be shortened by high temperature. 6. The operating current and optical power of laser must not be higher than the given rate current and power. The excessive current would accelerate aging and shorten lifetime, even damage the LD. 7. The semiconductor laser diode is a sensitive electronic device. Please observe precaution for handling electrostatitic sensitive devices. Aging Data .


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