AlGaInP Visible Laser Diode
AlGaInP Visible Laser Diode
2003/8
635nm 10mW 50 oC Reliable Operation
• Features 1. Short wavelength: 635nm (Typ.) 2. H...
Description
AlGaInP Visible Laser Diode
2003/8
635nm 10mW 50 oC Reliable Operation
Features 1. Short wavelength: 635nm (Typ.) 2. High output power: 10mW CW 3. Low threshold current: Ith= 35mA (Typ.) 4. Low operation voltage: Vop= 2.15V (Typ.) 5. High temperature: Tc = 50oC 6. MTTF > 3000hrs
ADL-63102TR/TL
Applications 1. Bar-code scanner 2. Line maker, Leveler 3. High visibility LD display
Absolute maximum ratings
Parameter Light output power Reverse voltage (LD) Reverse voltage (PD) Forward current (PD) Case temperature Storage temperature
Symbol Condition
PO CW VRL -
VRD
-
IFD -
TC TS -
Rating 12 2 30 10
-10~+50 -40~+75
Unit mW
V
V mA oC oC
Electrical and optical characteristics (Tc=25 oC)
Parameter Peak wavelength Threshold current Operating current Operating voltage Differential efficiency Monitor current Parallel divergence angle Perpendicular divergence angle Parallel FFP deviation angle Perpendicular FFP deviation angle Emission point accuracy
Symbol Ith Iop Vop Im
xyz
Min. 630 20 40
2 0.25 0.05
6 30 -
Typ. 635 30 55 2.15 0.50 0.1 7.5 33
-
Max. 640 40 65 2.5 0.65 0.5 11 40 2.9 1.9
80
Unit
Conditions
nm Po=10mW mA
mA V mW/mA mA deg
Po=10mW Po=10mW Po=5-10mW Po=10mW, VRD=5V
deg
deg Po=5mW deg
um
Precautions 1. Do not operate the device above the maximum rating condition, even momentarily. It may cause unexpected permanent damage to the device. 2. Semiconductor laser device is very sensitive to electrostatic discharge. High voltage spike current may...
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