T40HFL, T70HFL, T85HFL Series
Vishay Semiconductors
Fast Recovery Diodes (T-Modules), 40 A/70 A/85 A
D-55
PRODUCT SUMMARY
IF(AV) Type
40 A/70 A/85 A Modules - Diode, Fast
FEATURES • Fast recovery time characteristics
• Electrically isolated base plate
• 3500 VRMS isolating voltage • Standard JEDEC package
• Simplified mechanical designs, rapid assembly
• Large creepage distances
• UL E78996 approved
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
DESCRIPTION The series of T-modules uses fast recovery power diodes in a single diode configuration. The semiconductors are electrically isolated from the metal base, allowing common heatsink and compact assemblies to be built. These single diode modules can be used in conjunction with the thyristor modules as a freewheel diode. Application includes self-commutated inverters, DC choppers, motor control, inductive heating and electronic welders. These modules are intended for those applications where very fast recovery characteristics are required and for general power switching applications.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
T40HFL
IF(AV) IF(RMS)
40 63
IFSM
50 Hz 60 Hz
475 500
50 Hz I2t
60 Hz
1130 1030
VRRM
Range
trr Range
TJ Range
T70HFL 70 110 830 870
3460 3160 100 to 1000 200 to 1000 - 40 to 125
T85HFL 85 133
1300 1370 8550 7810
UNITS A A
A
A2s
V ns °C
Document Number: 93184 For technical questions within your region, please contact one of the following:
Revision: 19-May-10
[email protected],
[email protected],
[email protected]
www.vishay.com 1
T40HFL, T70HFL, T85HFL Series
Vishay Semiconductors
Fast Recovery Diodes (T-Modules), 40 A/70 A/85 A
ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS
TYPE NUMBER VOLTAGE CODE
trr CODE
T40HFL.. T70HFL.. T85HFL..
10 S02, S05, S10 20 S02, S05, S10 40 S02, S05, S10 60 S02, S05, S10 80 S05, S10 100 S05, S10
VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V
100 200 400 600 800 1000
VRSM, MAXIMUM NON-REPETITIVE PEAK
REVERSE VOLTAGE V
150
300
500
700
900
1100
IRRM MAXIMUM AT TJ = 25 °C μA
100
FORWARD CONDUCTION
PARAMETER
SYMBOL
TEST CONDITIONS
T40HFL T70HFL T85HFL UNITS
Maximum average forward current at case temperature
Maximum RMS forward current
IF(AV)
180° conduction, half sine wave
IF(RMS)
40 70 85 A 70 °C
63 110 133 A
Maximum peak, one-cycle forward, non-repetitive surge current
Maximum I2t for fusing
t = 10 ms No voltage
475 830 1300
t = 8.3 ms reapplied
500 870 1370
IFSM
t = 10 ms 100 % VRRM
A 400 700 1100
t = 8.3 ms reapplied
Sinusoidal half wave,
420
730 1150
t = 10 ms No voltage initial TJ = TJ maximum 1130
3460
8550
t = 8.3 ms reapplied I2t
t = 10 ms 100 % VRRM
t = 8.3 ms reapplied
1030 800 730
3160 2450 2230
7810 6050 5520
A2s
Maximum I2√t for fusing
I2√t t = 0.1 ms to 10 ms, no voltage reapplied
11 300 34 600 85 500 A2√s
Low level value of threshold voltage High level value of threshold voltage
Low level value of forward slope resistance High level value of forward slope resistance Maximum forward voltage drop
VF(TO)1 TJ = 25 °C, (16.7 % x π x IF(AV) < I < π x IF(AV))
VF(TO)2 TJ = 25 °C, (I > π x IF(AV))
rf1 TJ = 25 °C, (16.7 % x π x IF(AV) < I < π x IF(AV))
rf2 TJ = 25 °C, (I > π x IF(AV))
VFM
IFM = π x IF(AV), TJ = 25 °C, tp = 400 μs square wave Average power = VF(TO) x IF(AV) + rf x (IF(RMS))2
0.82 0.84 7.0 6.8 1.60
0.87 0.90 2.77 2.67 1.73
0.84 0.86 2.15 2.07 1.55
V mΩ
V
www.vishay.com 2
For technical questions within your region, please contact one of the following: Document Number: 93184
[email protected],
[email protected],
[email protected]
Revision: 19-May-10
T40HFL, T70HFL, T85HFL Series
Fast Recovery Diodes (T-Modules), 40 A/70 A/85 A
Vishay Semiconductors
REVERSE RECOVERY CHARACTERISTICS
PARAMETER SYMBOL
TEST CONDITIONS (1)
T40HFL S02 S05 S10
Maximum reverse recovery time
trr
TJ = 25 °C, -dIF/dt = 100 A/μs IF = 1 A to VR = 30 V
TJ = 25 °C, -dIF/dt = 25 A/μs IFM = π x rated IF(AV), VR = - 30 V
70 200
110 270 500 1000
Maximum reverse recovery charge
Qrr
TJ = 25 °C, -dIF/dt = 100 A/μs 0.25 0.4 1.35 IF = 1 A to VR = 30 V
TJ = 25 °C, -dIF/dt = 25 A/μs
0.55 2.0
IFM = π x rated IF(AV), VR = - 30 V
8.0
Note (1) Tested on LEM 300 A diodemeter tester
T70HFL S02 S05 S10 70 110 270 200 500 1000 0.25 0.4 1.35 0.6 2.1 8.5
T85HFL UNITS
S02 S05 S10
80 120 290 200 500 1000
ns
0.3 0.6 1.6 0.8 3.5 1.5
μC
BLOCKING
PARAMETER Maximum peak reverse leakage current
RMS isolation voltage
SYMBOL IRRM VISOL
TEST CONDITIONS
T40HFL T70HFL T85HFL UNITS
TJ = 125 °C
50 Hz, circuit to base, all terminals shorted, TJ = 25 °C, t = 1 s
20 3500
mA V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Junction operating temperature range
Storage temperature range Maximum internal thermal resistance, junction to case per module Thermal resistance, case to heatsink per module
Mounting torque ± 10 %
base to heatsink.