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T70HFL Dataheets PDF



Part Number T70HFL
Manufacturers Vishay
Logo Vishay
Description Fast Recovery Diodes
Datasheet T70HFL DatasheetT70HFL Datasheet (PDF)

T40HFL, T70HFL, T85HFL Series Vishay Semiconductors Fast Recovery Diodes (T-Modules), 40 A/70 A/85 A D-55 PRODUCT SUMMARY IF(AV) Type 40 A/70 A/85 A Modules - Diode, Fast FEATURES • Fast recovery time characteristics • Electrically isolated base plate • 3500 VRMS isolating voltage • Standard JEDEC package • Simplified mechanical designs, rapid assembly • Large creepage distances • UL E78996 approved • Compliant to RoHS directive 2002/95/EC • Designed and qualified for industrial level DESCRI.

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T40HFL, T70HFL, T85HFL Series Vishay Semiconductors Fast Recovery Diodes (T-Modules), 40 A/70 A/85 A D-55 PRODUCT SUMMARY IF(AV) Type 40 A/70 A/85 A Modules - Diode, Fast FEATURES • Fast recovery time characteristics • Electrically isolated base plate • 3500 VRMS isolating voltage • Standard JEDEC package • Simplified mechanical designs, rapid assembly • Large creepage distances • UL E78996 approved • Compliant to RoHS directive 2002/95/EC • Designed and qualified for industrial level DESCRIPTION The series of T-modules uses fast recovery power diodes in a single diode configuration. The semiconductors are electrically isolated from the metal base, allowing common heatsink and compact assemblies to be built. These single diode modules can be used in conjunction with the thyristor modules as a freewheel diode. Application includes self-commutated inverters, DC choppers, motor control, inductive heating and electronic welders. These modules are intended for those applications where very fast recovery characteristics are required and for general power switching applications. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS T40HFL IF(AV) IF(RMS) 40 63 IFSM 50 Hz 60 Hz 475 500 50 Hz I2t 60 Hz 1130 1030 VRRM Range trr Range TJ Range T70HFL 70 110 830 870 3460 3160 100 to 1000 200 to 1000 - 40 to 125 T85HFL 85 133 1300 1370 8550 7810 UNITS A A A A2s V ns °C Document Number: 93184 For technical questions within your region, please contact one of the following: Revision: 19-May-10 [email protected], [email protected], [email protected] www.vishay.com 1 T40HFL, T70HFL, T85HFL Series Vishay Semiconductors Fast Recovery Diodes (T-Modules), 40 A/70 A/85 A ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE trr CODE T40HFL.. T70HFL.. T85HFL.. 10 S02, S05, S10 20 S02, S05, S10 40 S02, S05, S10 60 S02, S05, S10 80 S05, S10 100 S05, S10 VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V 100 200 400 600 800 1000 VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 150 300 500 700 900 1100 IRRM MAXIMUM AT TJ = 25 °C μA 100 FORWARD CONDUCTION PARAMETER SYMBOL TEST CONDITIONS T40HFL T70HFL T85HFL UNITS Maximum average forward current at case temperature Maximum RMS forward current IF(AV) 180° conduction, half sine wave IF(RMS) 40 70 85 A 70 °C 63 110 133 A Maximum peak, one-cycle forward, non-repetitive surge current Maximum I2t for fusing t = 10 ms No voltage 475 830 1300 t = 8.3 ms reapplied 500 870 1370 IFSM t = 10 ms 100 % VRRM A 400 700 1100 t = 8.3 ms reapplied Sinusoidal half wave, 420 730 1150 t = 10 ms No voltage initial TJ = TJ maximum 1130 3460 8550 t = 8.3 ms reapplied I2t t = 10 ms 100 % VRRM t = 8.3 ms reapplied 1030 800 730 3160 2450 2230 7810 6050 5520 A2s Maximum I2√t for fusing I2√t t = 0.1 ms to 10 ms, no voltage reapplied 11 300 34 600 85 500 A2√s Low level value of threshold voltage High level value of threshold voltage Low level value of forward slope resistance High level value of forward slope resistance Maximum forward voltage drop VF(TO)1 TJ = 25 °C, (16.7 % x π x IF(AV) < I < π x IF(AV)) VF(TO)2 TJ = 25 °C, (I > π x IF(AV)) rf1 TJ = 25 °C, (16.7 % x π x IF(AV) < I < π x IF(AV)) rf2 TJ = 25 °C, (I > π x IF(AV)) VFM IFM = π x IF(AV), TJ = 25 °C, tp = 400 μs square wave Average power = VF(TO) x IF(AV) + rf x (IF(RMS))2 0.82 0.84 7.0 6.8 1.60 0.87 0.90 2.77 2.67 1.73 0.84 0.86 2.15 2.07 1.55 V mΩ V www.vishay.com 2 For technical questions within your region, please contact one of the following: Document Number: 93184 [email protected], [email protected], [email protected] Revision: 19-May-10 T40HFL, T70HFL, T85HFL Series Fast Recovery Diodes (T-Modules), 40 A/70 A/85 A Vishay Semiconductors REVERSE RECOVERY CHARACTERISTICS PARAMETER SYMBOL TEST CONDITIONS (1) T40HFL S02 S05 S10 Maximum reverse recovery time trr TJ = 25 °C, -dIF/dt = 100 A/μs IF = 1 A to VR = 30 V TJ = 25 °C, -dIF/dt = 25 A/μs IFM = π x rated IF(AV), VR = - 30 V 70 200 110 270 500 1000 Maximum reverse recovery charge Qrr TJ = 25 °C, -dIF/dt = 100 A/μs 0.25 0.4 1.35 IF = 1 A to VR = 30 V TJ = 25 °C, -dIF/dt = 25 A/μs 0.55 2.0 IFM = π x rated IF(AV), VR = - 30 V 8.0 Note (1) Tested on LEM 300 A diodemeter tester T70HFL S02 S05 S10 70 110 270 200 500 1000 0.25 0.4 1.35 0.6 2.1 8.5 T85HFL UNITS S02 S05 S10 80 120 290 200 500 1000 ns 0.3 0.6 1.6 0.8 3.5 1.5 μC BLOCKING PARAMETER Maximum peak reverse leakage current RMS isolation voltage SYMBOL IRRM VISOL TEST CONDITIONS T40HFL T70HFL T85HFL UNITS TJ = 125 °C 50 Hz, circuit to base, all terminals shorted, TJ = 25 °C, t = 1 s 20 3500 mA V THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS Junction operating temperature range Storage temperature range Maximum internal thermal resistance, junction to case per module Thermal resistance, case to heatsink per module Mounting torque ± 10 % base to heatsink.


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