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T85HF Dataheets PDF



Part Number T85HF
Manufacturers Vishay
Logo Vishay
Description Power Rectifier Diodes
Datasheet T85HF DatasheetT85HF Datasheet (PDF)

T40HF..., T70HF..., T85HF..., T110HF... Series Vishay Semiconductors Power Rectifier Diodes (T-Modules), 40 A to 110 A D-55 PRODUCT SUMMARY IF(AV) 40 A to 110 A Type Modules - Diode, High Voltage MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS T40HF IF(AV) IF(RMS) IFSM TC 50 Hz 60 Hz 40 85 63 570 600 50 Hz I2t 60 Hz 1630 1500 I2√t 16 300 VRRM TJ FEATURES • Electrically isolated base plate • Types up to 1200 VRRM • 3500 VRMS isolating voltage • Simplified mechanical des.

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T40HF..., T70HF..., T85HF..., T110HF... Series Vishay Semiconductors Power Rectifier Diodes (T-Modules), 40 A to 110 A D-55 PRODUCT SUMMARY IF(AV) 40 A to 110 A Type Modules - Diode, High Voltage MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS T40HF IF(AV) IF(RMS) IFSM TC 50 Hz 60 Hz 40 85 63 570 600 50 Hz I2t 60 Hz 1630 1500 I2√t 16 300 VRRM TJ FEATURES • Electrically isolated base plate • Types up to 1200 VRRM • 3500 VRMS isolating voltage • Simplified mechanical designs, rapid assembly • High surge capability • Large creepage distances • UL E78996 approved • Compliant to RoHS directive 2002/95/EC • Designed and qualified for industrial level DESCRIPTION These series of T-modules use standard recovery power rectifier diodes. The semiconductors are electrically isolated from the metal base, allowing common heatsink and compact assembly to be built. Applications include power supplies, battery charges, welders, motor controls and general industrial current rectification. T70HF T85HF 70 85 85 85 110 134 1200 1700 1250 1800 7100 14 500 6450 13 500 70 700 148 700 100 to 1200 - 40 to 150 T110HF 110 85 173 2000 2100 20 500 18 600 204 300 UNITS A °C A A A2s A2√s V °C Document Number: 93587 For technical questions within your region, please contact one of the following: Revision: 20-May-10 [email protected], [email protected], [email protected] www.vishay.com 1 T40HF..., T70HF..., T85HF..., T110HF... Series Vishay Semiconductors Power Rectifier Diodes (T-Modules), 40 A to 110 A ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE T40HF... T70HF... T85HF... T110HF... 10 20 40 60 80 100 120 VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V 100 200 400 600 800 1000 1200 VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 150 300 500 700 900 1100 1300 IRRM MAXIMUM AT TJ = 25 °C μA 100 FORWARD CONDUCTION PARAMETER SYMBOL TEST CONDITIONS T40HF T70HF T85HF T110HF UNITS Maximum average forward current at case temperature IF(AV) 180° conduction, half sine wave 40 70 85 110 A 85 85 85 85 °C Maximum RMS forward current Maximum peak, one-cycle forward, non-repetitive surge current Maximum I2t for fusing IF(RMS) IFSM I2t t = 10 ms No voltage t = 8.3 ms reapplied t = 10 ms 100 % VRRM t = 8.3 ms reapplied t = 10 ms No voltage t = 8.3 ms reapplied t = 10 ms 100 % VRRM t = 8.3 ms reapplied Sinusoidal half wave, initial TJ = TJ maximum 63 570 600 480 500 1630 1500 1150 1050 110 1200 1250 1000 1050 7100 6450 5000 4570 134 173 1700 2000 1800 2100 1450 1700 1500 1780 14 500 20 500 13 500 18 600 10 500 14 500 9600 13 200 A A A2s Maximum I2√t for fusing Low level value of threshold voltage High level value of threshold voltage Low level value of forward slope resistance High level value of forward slope resistance Maximum forward voltage drop I2√t VF(TO)1 VF(TO)2 rf1 rf2 VFM t = 0.1 ms to 10 ms, no voltage reapplied (16.7 % x π x IF(AV) < I < π x IF(AV)), TJ maximum (I > π x IF(AV)), TJ maximum 16 300 70 700 148 700 204 300 A2√s 0.66 0.76 0.68 0.84 0.95 0.90 0.68 0.86 V (16.7 % x π x IF(AV) < I < π x IF(AV)), TJ maximum (I > π x IF(AV)), TJ maximum 4.3 2.4 1.76 1.56 mΩ 3.1 1.7 1.08 1.12 IFM = π x IF(AV), TJ = 25 °C, tp = 400 μs square pulse Average power = VF(TO) x IF(AV) + rf x (IF(RMS))2 1.30 1.35 1.27 1.35 V www.vishay.com 2 For technical questions within your region, please contact one of the following: Document Number: 93587 [email protected], [email protected], [email protected] Revision: 20-May-10 BLOCKING PARAMETER Maximum peak reverse leakage current RMS isolation voltage T40HF..., T70HF..., T85HF..., T110HF... Series Power Rectifier Diodes (T-Modules), 40 A to 110 A Vishay Semiconductors SYMBOL TEST CONDITIONS IRRM VISOL TJ = 150 °C 50 Hz, circuit to base, all terminals shorted TJ = 25 °C, t = 1 s T40HF T70HF T85HF T110HF UNITS 15 15 20 20 mA 3500 3500 3500 3500 V THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS T40HF T70HF T85HF T110HF Maximum junction operating and storage temperature range Maximum thermal resistance, junction to case per junction Maximum thermal resistance, case to heatsink TJ, TStg RthJC RthCS DC operation Mounting surface smooth, flat and greased - 40 to 150 °C 1.36 0.69 0.62 0.47 K/W 0.2 Mounting torque, ± 10 % to heatsink terminals Non-lubricated threads M3.5 mounting screws (1) M5 screw terminals 1.3 ± 10 % 3 ± 10 % Nm Approximate weight See dimensions - link at the end of datasheet 54 g Case style T-module (D-55) Note (1) A mounting compound is recommended and the torque should be rechecked after a period of about 3 hours to allow for the spread of the compound ΔR CONDUCTION PER JUNCTION DEVICES SINUSOIDAL CONDUCTION AT TJ MAXIMUM 180° 120° 90° 60° 30° RECTANGULAR CONDUCTION AT TJ MAXIMUM 180° 120° 90° 60° 30° T40HF... 0.12 0.14 0.18 0.27 0.46 0.09 0.15 0.20 0.


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