SVD840F

SVD840T/F_Datasheet 8A, 500V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD840T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-RinTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers. FEATURES ∗ 8A,500V,RDS(on)（typ）=0.62Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability ORDERING INFORMATION Part No. SVD840T SVD840F Package TO-220-3L TO-220F-3L Marking SVD840T SVD840F Material Pb free Pb free Packing Tube Tube ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted) Characteristics Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current Pulsed Power Dissipation(TC=25°C, TO-220 Package) -Derate above 25°C Single Pulsed Avalanche Energy (Note 1) Operation Junction Temperature Storage Temperature Symbol VDS VGS ID IDM PD EAS TJ Tstg Rating SVD840T SVD840F 500 ±30 8.0 32 135 49 1.08 0.39 686 150 -55～+150 Unit V V A A W W/°C mJ °C °C HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http://www.silan.com.cn REV:1.4 2011.01.17 Page 1 of 7 SVD840T/F_Datasheet THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case Therma...