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SFR05S40ETR Dataheets PDF



Part Number SFR05S40ETR
Manufacturers Silan Microelectronics
Logo Silan Microelectronics
Description 400V SUPER-FAST RECOVERY RECTIFIER
Datasheet SFR05S40ETR DatasheetSFR05S40ETR Datasheet (PDF)

SFR05S40E_Datasheet 5A, 400V SUPER-FAST RECOVERY RECTIFIER GENERAL DESCRIPTION SFR05S40E is a Super-Fast Recovery Diode, fabricated in advanced silicon planar epitaxial technology. The process parameter and the device structure are fine tuned with optimized performance of forward voltage drop and reverse recovery time. Accuracy epitaxial dope control, advanced planar junction terminal structure and the platinum doped life control, guarantee the best overall performance, ruggedness and reliabilit.

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SFR05S40E_Datasheet 5A, 400V SUPER-FAST RECOVERY RECTIFIER GENERAL DESCRIPTION SFR05S40E is a Super-Fast Recovery Diode, fabricated in advanced silicon planar epitaxial technology. The process parameter and the device structure are fine tuned with optimized performance of forward voltage drop and reverse recovery time. Accuracy epitaxial dope control, advanced planar junction terminal structure and the platinum doped life control, guarantee the best overall performance, ruggedness and reliability characteristics. SFR05S40E is intended for use in the output rectification stage of SMPS, UPS, DC-DC converters as well as free-wheeling diode in low voltage inverters and chopper motor drivers. FEATURES ∗ Ultrafast 35 Nanosecond Recovery Time ∗ Low Forward Voltage Drop ∗ Low Leakage Current ∗ 150 °C Operating Junction Temperature NOMENCLATURE ORDERING INFORMATION Part No. SFR05S40E SFR05S40ETR Package DO-201AD DO-201AD Marking SFR05S40E SFR05S40E Material Pb free Pb free Packing Bulk AMMO HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http://www.silan.com.cn REV:1.0 2011.04.28 Page 1 of 5 SFR05S40E_Datasheet ABSOLUTE MAXIMUM RATINGS Characteristics Peak Repetitive Reverse Voltage Average Rectified Forward Cuttent Per Leg Non Repetitive Peak Surge Current Operation Junction Temperature Storage Temperature Per Leg Symbol VRRM IF(AV) IFSM TJ Tstg Rating 400 5.0 150 -55~+150 -55~+150 Unit V A A °C °C ELECTRICAL CHARACTERISTICS(Per Leg) Characteristics Maximum Instantaneous Forward Voltage (Note 1) IF=5.0 Amps, Tc=25°C Maximum Instantaneous Reverse Current(Note 1) (Rated dc Voltage, Tc=150°C) (Rated dc Voltage, Tc=25°C) Maximum Reverse Recovery Time (IF=0.5 Amp, IR=1.0Amp, IREC=0.25Amp) Symbol Min. Typ. Max. Unit VF -- -- 1.25 V 300 IR -- -- µA 5.0 trr -- -- 35 ns HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http://www.silan.com.cn REV:1.0 2011.04.28 Page 2 of 5 TYPICAL CHARACTERISTICS Figure 1. On-region characteristics 10.0 1.0 Variable VGS= 4.V VGS= 4.5V VGS= 5V VGS= 5.5V VGS= 6V VGS= 7V VGS= 8V VGS=10V 0.1 0.1 Note: 1.250 s pulse test 2.Tc=25 C 1.0 10.0 VDS drain-source voltage [V] Figure 3. On-resistance variation vs. drain current and gate voltage 0.50 VGS= 10.0V 0.45 VGS= 20.0V 0.40 0.35 0.30 2 Note: Tj=25℃ 6 10 14 ID drain current [A] 18 SFR05S40E_Datasheet 100.0 10.0 Figure 2. Transfer characteristics -55℃ 25℃ 150℃ 1.0 0.1 0 Note: 1.VDS=25V 2.250 s pulse test 2468 VGS gate-source voltage [V] 10 Figure 4. Body diode forward voltage variation vs. source current 100.0 -55℃ 25℃ Note: 1.VGS=0V 2.250 s pulse test 10.0 150℃ 1.0 0.1 0.2 0.4 0.6 0.8 1 VSD source-drain voltage [V] 1.2 HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http://www.silan.com.cn REV:1.0 2011.04.28 Page 3 of 5 PACKAGE OUTLINE DO-201AD SFR05S40E_Datasheet UNIT: mm Disclaimer: • Silan reserves the right to make changes to the information herein for the improvement of the design and performance without further notice! Customers should obtain.


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