Document
SFR05S40E_Datasheet
5A, 400V SUPER-FAST RECOVERY RECTIFIER
GENERAL DESCRIPTION
SFR05S40E is a Super-Fast Recovery Diode, fabricated in advanced silicon planar epitaxial technology. The process parameter and the device structure are fine tuned with optimized performance of forward voltage drop and reverse recovery time. Accuracy epitaxial dope control, advanced planar junction terminal structure and the platinum doped life control, guarantee the best overall performance, ruggedness and reliability characteristics. SFR05S40E is intended for use in the output rectification stage of SMPS, UPS, DC-DC converters as well as free-wheeling diode in low voltage inverters and chopper motor drivers.
FEATURES
∗ Ultrafast 35 Nanosecond Recovery Time ∗ Low Forward Voltage Drop ∗ Low Leakage Current ∗ 150 °C Operating Junction Temperature
NOMENCLATURE
ORDERING INFORMATION
Part No. SFR05S40E SFR05S40ETR
Package DO-201AD DO-201AD
Marking SFR05S40E SFR05S40E
Material Pb free Pb free
Packing Bulk
AMMO
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.0
2011.04.28 Page 1 of 5
SFR05S40E_Datasheet
ABSOLUTE MAXIMUM RATINGS
Characteristics Peak Repetitive Reverse Voltage Average Rectified Forward Cuttent
Per Leg
Non Repetitive Peak Surge Current Operation Junction Temperature Storage Temperature
Per Leg
Symbol VRRM IF(AV)
IFSM TJ Tstg
Rating 400 5.0
150 -55~+150 -55~+150
Unit V A
A °C °C
ELECTRICAL CHARACTERISTICS(Per Leg)
Characteristics Maximum Instantaneous Forward Voltage (Note 1) IF=5.0 Amps, Tc=25°C Maximum Instantaneous Reverse Current(Note 1) (Rated dc Voltage, Tc=150°C) (Rated dc Voltage, Tc=25°C) Maximum Reverse Recovery Time (IF=0.5 Amp, IR=1.0Amp, IREC=0.25Amp)
Symbol Min. Typ. Max. Unit VF -- -- 1.25 V
300
IR -- --
µA
5.0
trr -- -- 35 ns
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
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REV:1.0
2011.04.28 Page 2 of 5
TYPICAL CHARACTERISTICS
Figure 1. On-region characteristics
10.0 1.0
Variable
VGS= 4.V VGS= 4.5V VGS= 5V VGS= 5.5V VGS= 6V VGS= 7V VGS= 8V VGS=10V
0.1 0.1
Note: 1.250 s pulse test 2.Tc=25 C
1.0 10.0
VDS drain-source voltage [V]
Figure 3. On-resistance variation vs. drain current and gate voltage
0.50
VGS= 10.0V
0.45
VGS= 20.0V
0.40
0.35
0.30 2
Note: Tj=25℃
6 10 14
ID drain current [A]
18
SFR05S40E_Datasheet
100.0 10.0
Figure 2. Transfer characteristics
-55℃ 25℃ 150℃
1.0
0.1 0
Note: 1.VDS=25V 2.250 s pulse test
2468
VGS gate-source voltage [V]
10
Figure 4. Body diode forward voltage variation vs. source current
100.0
-55℃ 25℃
Note: 1.VGS=0V 2.250 s pulse test
10.0 150℃
1.0
0.1 0.2
0.4 0.6 0.8
1
VSD source-drain voltage [V]
1.2
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.0
2011.04.28 Page 3 of 5
PACKAGE OUTLINE DO-201AD
SFR05S40E_Datasheet
UNIT: mm
Disclaimer: • Silan reserves the right to make changes to the information herein for the improvement of the design and performance without further notice! Customers should obtain.