SBD10C100T/F_Datasheet
10A, 100V SCHOTTKY RECTIFIER
GENERAL DESCRIPTION
SBD10C100T/F is schottky rectifier fabricated in...
SBD10C100T/F_Datasheet
10A, 100V
SCHOTTKY RECTIFIER
GENERAL DESCRIPTION
SBD10C100T/F is
schottky rectifier fabricated in silicon epitaxial planar technology. Typical applications are in switching power supplies and protection circuit etc.
FEATURES
∗ Guard ring for Stress Protection ∗ High Surge Capacity ∗ Low power loss , high efficiency ∗ Low forward voltage drop
ORDERING SPECIFICATIONS
Part No. SBD10C100T SBD10C100F
Package TO-220-3L TO-220F-3L
Marking SBD10C100T SBD10C100F
Material Pb free Pb free
Packing Tube Tube
ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted)
Parameter Maximum Repetitive Peak Reverse Voltage Average Forward Rectified Current Peak Forward Surge
[email protected] Operation Junction Temperature Storage Temperature Range
Symbol VRRM IFAV IFSM TJ TSTG
Value 100 10 120 150
-40~150
Unit V A A °C °C
THERMAL CHARACTERISTICS
Parameter Thermal Resistance, Junction-to-Case
Symbol RθJC
Value 2.0
Unit °C/W
ELECTRICAL CHARACTERISTICS
Parameter Forward Voltage
Symbol VF
Reverse Current
IR
Test conditions IF=5A (TC=25°C) IF=5A(TC=125°C) VR=100V(TC=25°C) VR=100V(TC=125°C)
Min. -----
Max. 0.85 0.75 50 25
Unit V V μA mA
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.2
2010.10.22 Page 1 of 6
SBD10C100T/F_Datasheet
TYPICAL CHARACTERISTICS
Figure 1. Typical forward voltage
100 25°C
10 75°C 125°C
1
0.1
0.01 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
VF [V]
Figure 2. Typical reverse current
100 25°C
10 100°C 125°C
1
0.1
0...