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SBD10C100T

Silan Microelectronics

100V SCHOTTKY RECTIFIER

SBD10C100T/F_Datasheet 10A, 100V SCHOTTKY RECTIFIER GENERAL DESCRIPTION SBD10C100T/F is schottky rectifier fabricated in...


Silan Microelectronics

SBD10C100T

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Description
SBD10C100T/F_Datasheet 10A, 100V SCHOTTKY RECTIFIER GENERAL DESCRIPTION SBD10C100T/F is schottky rectifier fabricated in silicon epitaxial planar technology. Typical applications are in switching power supplies and protection circuit etc. FEATURES ∗ Guard ring for Stress Protection ∗ High Surge Capacity ∗ Low power loss , high efficiency ∗ Low forward voltage drop ORDERING SPECIFICATIONS Part No. SBD10C100T SBD10C100F Package TO-220-3L TO-220F-3L Marking SBD10C100T SBD10C100F Material Pb free Pb free Packing Tube Tube ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted) Parameter Maximum Repetitive Peak Reverse Voltage Average Forward Rectified Current Peak Forward Surge [email protected] Operation Junction Temperature Storage Temperature Range Symbol VRRM IFAV IFSM TJ TSTG Value 100 10 120 150 -40~150 Unit V A A °C °C THERMAL CHARACTERISTICS Parameter Thermal Resistance, Junction-to-Case Symbol RθJC Value 2.0 Unit °C/W ELECTRICAL CHARACTERISTICS Parameter Forward Voltage Symbol VF Reverse Current IR Test conditions IF=5A (TC=25°C) IF=5A(TC=125°C) VR=100V(TC=25°C) VR=100V(TC=125°C) Min. ----- Max. 0.85 0.75 50 25 Unit V V μA mA HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http://www.silan.com.cn REV:1.2 2010.10.22 Page 1 of 6 SBD10C100T/F_Datasheet TYPICAL CHARACTERISTICS Figure 1. Typical forward voltage 100 25°C 10 75°C 125°C 1 0.1 0.01 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 VF [V] Figure 2. Typical reverse current 100 25°C 10 100°C 125°C 1 0.1 0...




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