ME04N25

N-Channel 250-V (D-S) MOSFET ME04N25/ME04N25-G GENERAL DESCRIPTION The ME04N25 is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on state resistance. These devices are particularly suited for low voltage application such as cellular phone, notebook computer power management and other battery powered circuits, and low in-line power loss that are needed in a very small outline surface mount package. FEATURES ● RDS(ON)≦1.8Ω@VGS=10V ● RDS(ON)≦2.0Ω@VGS=5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● DC/DC Converter ● Load Switch ● LCD Display inverter PIN CONFIGURATION (TO-252-3L) Top View e Ordering Information: ME04N25 (Pb-free) ME04N25-G (Green product-Halogen free) Absolute Maximum Ratings (TC=25℃ Unless Otherwise Noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC=25℃ TC=70℃ ID Pulsed Drain Current IDM Maximum Power Dissipation TC=25℃ TC=70℃ PD Operating Junction Temperature TJ Thermal Resistance-Junction to Case * RθJC * The device mounted on 1in2 FR4 board with 2 oz copper Maximum Ratings 250 ±20 3.3 2.6 13 31 20 -55 to 150 4.0 Unit V V A A W ℃ ℃/W Feb,2012,Ver1.1 01 N-Channel 250-V (D-S) MOSFET ME04N25/ME04N25-G Electrical Characteristics (TC =...