Document
2SK213, 2SK214, 2SK215, 2SK216
Silicon N Channel MOS FET
Application
High frequency and low frequency power amplifier, high speed switching. Complementary pair with 2SJ76, J77, J78, J79
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Features
• Suitable for direct mounting • High forward transfer admittance • Excellent frequency response • Enhancement-mode
REJ03G0903-0200 (Previous: ADE-208-1241)
Rev.2.00 Sep 07, 2005
Outline
RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB)
G
D
123
S
1. Gate 2. Source
(Flange) 3. Drain
Rev.2.00 Sep 07, 2005 page 1 of 5
2SK213, 2SK214, 2SK215, 2SK216
Absolute Maximum Ratings
Item Drain to source voltage 2SK213
2SK214 2SK215 2SK216 Gate to source voltage Drain current Body to drain diode reverse drain current Channel dissipation
www.DataSheetC4Uha.cnonmel temperature Storage temperature Note: 1. Value at TC = 25°C
Symbol VDSX
VGSS ID IDR Pch
Pch*1 Tch Tstg
Ratings 140 160 180 200 ±15 500 500 1.75 30 150
–45 to +150
(Ta = 25°C) Unit
V
V mA mA W W °C °C
Electrical Characteristics
Item
Drain to source breakdown 2SK213
voltage
2SK214
2SK215
2SK216
Gate to source breakdown voltage
Gate to source voltage
Drain to source saturation voltage
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Note: 2. Pulse test
(Ta = 25°C)
Symbol Min Typ Max Unit
Test conditions
V(BR)DSX
140 160
— —
— —
V ID = 1 mA, VGS = –2 V V
180 —
—
V
200 —
—
V
V(BR)GSS
±15
—
—
V IG = ±10 µA, VDS = 0
VGS(on)
0.2
—
1.5
V ID = 10 mA, VDS = 10 V *2
VDS(sat)
—
— 2.0
V ID = 10 mA, VGD = 0 *2
|yfs| 20 40 — mS ID = 10 mA, VDS = 20 V *2
Ciss
— 90 — pF ID = 10 mA, VDS = 10 V,
Crss
— 2.2 — pF f = 1 MHz
Rev.2.00 Sep 07, 2005 page 2 of 5
2SK213, 2SK214, 2SK215, 2SK216
Main Characteristics
Power vs. Temperature Derating 60
40
Channel Dissipation Pch (W)
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20
0 50 100 150 Case Temperature TC (°C)
Drain Current ID (mA)
Typical Output Characteristics
50 TC = 25°C
0.8
40 0.7
30 0.6
20 0.5 0.4
10 0.3 0.2
VGS = 0.1 V
0 20 40 60 80 100
Drain to Source Voltage VDS (V)
Drain Current ID (mA)
TC = –25°C 25 75
Typical Transfer Characteristics 100
VDS = 20 V 80
60 40 20
0 0.4 0.8 1.2 1.6 2.0 Gate Source Voltage VGS (V)
Rev.2.00 Sep 07, 2005 page 3 of 5
Forward Transfer Admittance yfs (mS)
Drain Current ID (mA)
Drain Current ID (mA)
Typical Output Characteristics
500 3.5 400
TC = 25°C 3.0
2.5 300
2.0 200
1.5
100 1.0
VGS = 0.5 V
0 4 8 12 16 20 Drain to Source Voltage VDS (V)
–25°C
25
75
=
T
C
Typical Transfer Characteristics 500
VDS = 20 V 400
300
200
100
0 12345 Gate Source Voltage VGS (V)
Forward Transfer Admittance vs. Drain Current
200 100
50
20 10
TC = 25°C 5 VDS = 20 V
2 5 10 20 50 100 200 Drain Current ID (mA)
2SK213, 2SK214, 2SK215, 2SK216
Forward Transfer Admittance vs. Frequency
500
100
Forward Transfer Admittance yfs (mS)
10 TC = 25°C VDS = 20 V ID = 10 mA
1.0
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0.1
0.05 5 k 10 k
100 k 1 M 10 M 50 M Frequency f (HZ)
Rev.2.00 Sep 07, 2005 page 4 of 5
2SK213, 2SK214, 2SK215, 2SK216
Package Dimensions
JEITA Package Code SC-46
RENESAS Code PRSS0004AC-A
Package Name TO-220AB / TO-220ABV
MASS[Typ.] 1.8g
11.5 Max
10.16 ± 0.2 9.5 8.0
φ
3.6
+0.1 –0.08
4.44 ± 0.2 1.26 ± 0.15
2.79 ± 0.2
+0.2 –0.1
15.0 ± 0.3
6.4
18.5 ± 0.5 1.27
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7.8 ± 0.5
2.54 ± 0.5
1.5 Max 0.76 ± 0.1
2.54 ± 0.5
14.0 ± 0.5
2.7 Max 0.5 ± 0.1
Unit: mm
Ordering Information
Part Name
Quantity
Shipping Container
2SK213-E
500 pcs
Box (Sack)
2SK214-E
500 pcs
Box (Sack)
2SK215-E
500 pcs
Box (Sack)
2SK216-E
500 pcs
Box (Sack)
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product.
Rev.2.00 Sep 07, 2005 page 5 of 5
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Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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