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K216 Dataheets PDF



Part Number K216
Manufacturers Renesas Technology
Logo Renesas Technology
Description 2SK216
Datasheet K216 DatasheetK216 Datasheet (PDF)

2SK213, 2SK214, 2SK215, 2SK216 Silicon N Channel MOS FET Application High frequency and low frequency power amplifier, high speed switching. Complementary pair with 2SJ76, J77, J78, J79 www.DataSheet4U.com Features • Suitable for direct mounting • High forward transfer admittance • Excellent frequency response • Enhancement-mode REJ03G0903-0200 (Previous: ADE-208-1241) Rev.2.00 Sep 07, 2005 Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB) G D 123 S 1. Gate 2. Source (F.

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2SK213, 2SK214, 2SK215, 2SK216 Silicon N Channel MOS FET Application High frequency and low frequency power amplifier, high speed switching. Complementary pair with 2SJ76, J77, J78, J79 www.DataSheet4U.com Features • Suitable for direct mounting • High forward transfer admittance • Excellent frequency response • Enhancement-mode REJ03G0903-0200 (Previous: ADE-208-1241) Rev.2.00 Sep 07, 2005 Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB) G D 123 S 1. Gate 2. Source (Flange) 3. Drain Rev.2.00 Sep 07, 2005 page 1 of 5 2SK213, 2SK214, 2SK215, 2SK216 Absolute Maximum Ratings Item Drain to source voltage 2SK213 2SK214 2SK215 2SK216 Gate to source voltage Drain current Body to drain diode reverse drain current Channel dissipation www.DataSheetC4Uha.cnonmel temperature Storage temperature Note: 1. Value at TC = 25°C Symbol VDSX VGSS ID IDR Pch Pch*1 Tch Tstg Ratings 140 160 180 200 ±15 500 500 1.75 30 150 –45 to +150 (Ta = 25°C) Unit V V mA mA W W °C °C Electrical Characteristics Item Drain to source breakdown 2SK213 voltage 2SK214 2SK215 2SK216 Gate to source breakdown voltage Gate to source voltage Drain to source saturation voltage Forward transfer admittance Input capacitance Reverse transfer capacitance Note: 2. Pulse test (Ta = 25°C) Symbol Min Typ Max Unit Test conditions V(BR)DSX 140 160 — — — — V ID = 1 mA, VGS = –2 V V 180 — — V 200 — — V V(BR)GSS ±15 — — V IG = ±10 µA, VDS = 0 VGS(on) 0.2 — 1.5 V ID = 10 mA, VDS = 10 V *2 VDS(sat) — — 2.0 V ID = 10 mA, VGD = 0 *2 |yfs| 20 40 — mS ID = 10 mA, VDS = 20 V *2 Ciss — 90 — pF ID = 10 mA, VDS = 10 V, Crss — 2.2 — pF f = 1 MHz Rev.2.00 Sep 07, 2005 page 2 of 5 2SK213, 2SK214, 2SK215, 2SK216 Main Characteristics Power vs. Temperature Derating 60 40 Channel Dissipation Pch (W) www.DataSheet4U.com 20 0 50 100 150 Case Temperature TC (°C) Drain Current ID (mA) Typical Output Characteristics 50 TC = 25°C 0.8 40 0.7 30 0.6 20 0.5 0.4 10 0.3 0.2 VGS = 0.1 V 0 20 40 60 80 100 Drain to Source Voltage VDS (V) Drain Current ID (mA) TC = –25°C 25 75 Typical Transfer Characteristics 100 VDS = 20 V 80 60 40 20 0 0.4 0.8 1.2 1.6 2.0 Gate Source Voltage VGS (V) Rev.2.00 Sep 07, 2005 page 3 of 5 Forward Transfer Admittance yfs (mS) Drain Current ID (mA) Drain Current ID (mA) Typical Output Characteristics 500 3.5 400 TC = 25°C 3.0 2.5 300 2.0 200 1.5 100 1.0 VGS = 0.5 V 0 4 8 12 16 20 Drain to Source Voltage VDS (V) –25°C 25 75 = T C Typical Transfer Characteristics 500 VDS = 20 V 400 300 200 100 0 12345 Gate Source Voltage VGS (V) Forward Transfer Admittance vs. Drain Current 200 100 50 20 10 TC = 25°C 5 VDS = 20 V 2 5 10 20 50 100 200 Drain Current ID (mA) 2SK213, 2SK214, 2SK215, 2SK216 Forward Transfer Admittance vs. Frequency 500 100 Forward Transfer Admittance yfs (mS) 10 TC = 25°C VDS = 20 V ID = 10 mA 1.0 www.DataSheet4U.com 0.1 0.05 5 k 10 k 100 k 1 M 10 M 50 M Frequency f (HZ) Rev.2.00 Sep 07, 2005 page 4 of 5 2SK213, 2SK214, 2SK215, 2SK216 Package Dimensions JEITA Package Code SC-46 RENESAS Code PRSS0004AC-A Package Name TO-220AB / TO-220ABV MASS[Typ.] 1.8g 11.5 Max 10.16 ± 0.2 9.5 8.0 φ 3.6 +0.1 –0.08 4.44 ± 0.2 1.26 ± 0.15 2.79 ± 0.2 +0.2 –0.1 15.0 ± 0.3 6.4 18.5 ± 0.5 1.27 www.DataSheet4U.com 7.8 ± 0.5 2.54 ± 0.5 1.5 Max 0.76 ± 0.1 2.54 ± 0.5 14.0 ± 0.5 2.7 Max 0.5 ± 0.1 Unit: mm Ordering Information Part Name Quantity Shipping Container 2SK213-E 500 pcs Box (Sack) 2SK214-E 500 pcs Box (Sack) 2SK215-E 500 pcs Box (Sack) 2SK216-E 500 pcs Box (Sack) Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Sep 07, 2005 page 5 of 5 www.DataSheet4U.com Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, dia.


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