D1187

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SD1187 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Low Collector Saturation Voltage- : VCE(sat)= 0.5V(Max.) @ IC= 6A ·High Power Dissipation APPLICATIONS ·High power switching applications ·DC-DC converter and DC-AC inverter applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5V IC Collector Current-Continuous 10 A IBB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range 2A 80 W 150 ℃ -55~150 ℃ isc Website：www.iscsemi.cn Free Datasheet http://www.datasheet4u.com/ INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SD1187 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA ; IB= 0 80 V VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB=B 0.3A VBE(sat) Base-Emitter Saturation Voltage IC= 6A; IB=B 0.3A ICBO Collector Cutoff Current VCB= 100V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 0.5 V 1.4 V 10 μA 10 μA hFE-1 DC Current Gain IC= 1A; VCE= 1V 70 240 hFE-2 DC Current Gain IC= 6A; VCE= 1V 30 COB Output Capacitance IE= 0; VCB= 10V; ftest= 1.0MHz fT Current-Gain—Bandwidth Product I...